Radiative decay rates of impurity states in semiconductor nanocrystals
Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals ma...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4934595 |
| _version_ | 1818902077630316544 |
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| author | Vadim K. Turkov Alexander V. Baranov Anatoly V. Fedorov Ivan D. Rukhlenko |
| author_facet | Vadim K. Turkov Alexander V. Baranov Anatoly V. Fedorov Ivan D. Rukhlenko |
| author_sort | Vadim K. Turkov |
| collection | DOAJ |
| description | Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals. |
| first_indexed | 2024-12-19T20:29:55Z |
| format | Article |
| id | doaj.art-1ff5a4b3a21944589372078b2836406c |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T20:29:55Z |
| publishDate | 2015-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1ff5a4b3a21944589372078b2836406c2022-12-21T20:06:45ZengAIP Publishing LLCAIP Advances2158-32262015-10-01510107126107126-610.1063/1.4934595045510ADVRadiative decay rates of impurity states in semiconductor nanocrystalsVadim K. Turkov0Alexander V. Baranov1Anatoly V. Fedorov2Ivan D. Rukhlenko3ITMO University, 197101 Saint Petersburg, RussiaITMO University, 197101 Saint Petersburg, RussiaITMO University, 197101 Saint Petersburg, RussiaITMO University, 197101 Saint Petersburg, RussiaDoped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.http://dx.doi.org/10.1063/1.4934595 |
| spellingShingle | Vadim K. Turkov Alexander V. Baranov Anatoly V. Fedorov Ivan D. Rukhlenko Radiative decay rates of impurity states in semiconductor nanocrystals AIP Advances |
| title | Radiative decay rates of impurity states in semiconductor nanocrystals |
| title_full | Radiative decay rates of impurity states in semiconductor nanocrystals |
| title_fullStr | Radiative decay rates of impurity states in semiconductor nanocrystals |
| title_full_unstemmed | Radiative decay rates of impurity states in semiconductor nanocrystals |
| title_short | Radiative decay rates of impurity states in semiconductor nanocrystals |
| title_sort | radiative decay rates of impurity states in semiconductor nanocrystals |
| url | http://dx.doi.org/10.1063/1.4934595 |
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