Fabrication and simulation of 1540-nm transmission by 532-nm excitation in photonic crystal of Er:ZnO film
Erbium (Er)-doped ZnO thin film is fabricated on sapphire substrate by radio frequency magnetron sputtering technology. The as-deposited Er:ZnO film has a good film quality and exhibits excellent single-mode waveguide characteristic. A photonic crystal structure in the Er:ZnO film is fabricated by f...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2017-11-01
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| Series: | Nanotechnology Reviews |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/ntrev-2017-0143 |
| Summary: | Erbium (Er)-doped ZnO thin film is fabricated on sapphire substrate by radio frequency magnetron sputtering technology. The as-deposited Er:ZnO film has a good film quality and exhibits excellent single-mode waveguide characteristic. A photonic crystal structure in the Er:ZnO film is fabricated by focused-ion-beam etching. When the film is stimulated by a 532 nm laser, photoluminescence (PL) at 1540 nm can be excited. Simulation results show that the propagation of Er-related emission of 1540 nm will be well restricted along a certain direction in the photonic crystal structure. It provides a novel way to control and confine the transmission of light in ZnO waveguide and will be applicable for the application of Er:ZnO photonic devices. |
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| ISSN: | 2191-9089 2191-9097 |