Study of Characteristics of Porous Silicon by Electrochemical Etching
In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the by atomic force microscopy, XRD and FTIR spectroscopy.The atomic force microscopy investigation shows the average diam...
| Main Author: | |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2013-01-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_83949_6926c2edef69ef8948a7e94740e3be83.pdf |
| _version_ | 1797325630335877120 |
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| author | Hasan Hadi Hussein |
| author_facet | Hasan Hadi Hussein |
| author_sort | Hasan Hadi Hussein |
| collection | DOAJ |
| description | In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the by atomic force microscopy, XRD and FTIR spectroscopy.The atomic force microscopy investigation shows the average diameter pore is increasing with increase of etching time.The X-ray diffraction investigates of the porous silicon layer is shown the broadening the width of the peak compare with the bulk silicon is directly correlated to the size of the nano-scale. The FTIR spectra for porous silicon are shown that the dominant bonds being Si-H groups. |
| first_indexed | 2024-03-08T06:12:09Z |
| format | Article |
| id | doaj.art-20402cb8bf49494cbe48c515c8dc46a8 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:12:09Z |
| publishDate | 2013-01-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-20402cb8bf49494cbe48c515c8dc46a82024-02-04T17:34:06ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582013-01-01311B343810.30684/etj.31.1B.583949Study of Characteristics of Porous Silicon by Electrochemical EtchingHasan Hadi HusseinIn this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the by atomic force microscopy, XRD and FTIR spectroscopy.The atomic force microscopy investigation shows the average diameter pore is increasing with increase of etching time.The X-ray diffraction investigates of the porous silicon layer is shown the broadening the width of the peak compare with the bulk silicon is directly correlated to the size of the nano-scale. The FTIR spectra for porous silicon are shown that the dominant bonds being Si-H groups.https://etj.uotechnology.edu.iq/article_83949_6926c2edef69ef8948a7e94740e3be83.pdfporous siliconelectrochemical etchingmorphologicalftir |
| spellingShingle | Hasan Hadi Hussein Study of Characteristics of Porous Silicon by Electrochemical Etching Engineering and Technology Journal porous silicon electrochemical etching morphological ftir |
| title | Study of Characteristics of Porous Silicon by Electrochemical Etching |
| title_full | Study of Characteristics of Porous Silicon by Electrochemical Etching |
| title_fullStr | Study of Characteristics of Porous Silicon by Electrochemical Etching |
| title_full_unstemmed | Study of Characteristics of Porous Silicon by Electrochemical Etching |
| title_short | Study of Characteristics of Porous Silicon by Electrochemical Etching |
| title_sort | study of characteristics of porous silicon by electrochemical etching |
| topic | porous silicon electrochemical etching morphological ftir |
| url | https://etj.uotechnology.edu.iq/article_83949_6926c2edef69ef8948a7e94740e3be83.pdf |
| work_keys_str_mv | AT hasanhadihussein studyofcharacteristicsofporoussiliconbyelectrochemicaletching |