Rhombohedral Boron Monosulfide as a p-Type Semiconductor
Two-dimensional materials have wide ranging applications in electronic devices and catalysts owing to their unique properties. Boron-based compounds, which exhibit a polymorphic nature, are an attractive choice for developing boron-based two-dimensional materials. Among them, rhombohedral boron mono...
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| Format: | Article |
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MDPI AG
2023-02-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/28/4/1896 |
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| author | Norinobu Watanabe Keisuke Miyazaki Masayuki Toyoda Kotaro Takeyasu Naohito Tsujii Haruki Kusaka Akiyasu Yamamoto Susumu Saito Masashi Miyakawa Takashi Taniguchi Takashi Aizawa Takao Mori Masahiro Miyauchi Takahiro Kondo |
| author_facet | Norinobu Watanabe Keisuke Miyazaki Masayuki Toyoda Kotaro Takeyasu Naohito Tsujii Haruki Kusaka Akiyasu Yamamoto Susumu Saito Masashi Miyakawa Takashi Taniguchi Takashi Aizawa Takao Mori Masahiro Miyauchi Takahiro Kondo |
| author_sort | Norinobu Watanabe |
| collection | DOAJ |
| description | Two-dimensional materials have wide ranging applications in electronic devices and catalysts owing to their unique properties. Boron-based compounds, which exhibit a polymorphic nature, are an attractive choice for developing boron-based two-dimensional materials. Among them, rhombohedral boron monosulfide (r-BS) has recently attracted considerable attention owing to its unique layered structure similar to that of transition metal dichalcogenides and a layer-dependent bandgap. However, experimental evidence that clarifies the charge carrier type in the r-BS semiconductor is lacking. In this study, we synthesized r-BS and evaluated its performance as a semiconductor by measuring the Seebeck coefficient and photo-electrochemical responses. The properties unique to p-type semiconductors were observed in both measurements, indicating that the synthesized r-BS is a p-type semiconductor. Moreover, a distinct Fano resonance was observed in Fourier transform infrared absorption spectroscopy, which was ascribed to the Fano resonance between the E(2) (TO) phonon mode and electrons in the band structures of r-BS, indicating that the p-type carrier was intrinsically doped in the synthesized r-BS. These results demonstrate the potential future application prospects of r-BS. |
| first_indexed | 2024-03-11T08:20:45Z |
| format | Article |
| id | doaj.art-205eb2a0e8c74e6b92ed4797ae04dbcf |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-11T08:20:45Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-205eb2a0e8c74e6b92ed4797ae04dbcf2023-11-16T22:24:42ZengMDPI AGMolecules1420-30492023-02-01284189610.3390/molecules28041896Rhombohedral Boron Monosulfide as a p-Type SemiconductorNorinobu Watanabe0Keisuke Miyazaki1Masayuki Toyoda2Kotaro Takeyasu3Naohito Tsujii4Haruki Kusaka5Akiyasu Yamamoto6Susumu Saito7Masashi Miyakawa8Takashi Taniguchi9Takashi Aizawa10Takao Mori11Masahiro Miyauchi12Takahiro Kondo13Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanDepartment of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, JapanDepartment of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, JapanTsukuba Research Center for Energy Materials Science, Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanGraduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanInstitute of Engineering, Tokyo University of Agriculture and Technology, Tokyo 183-8538, JapanDepartment of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, JapanResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, JapanDepartment of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, JapanTsukuba Research Center for Energy Materials Science, Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, JapanTwo-dimensional materials have wide ranging applications in electronic devices and catalysts owing to their unique properties. Boron-based compounds, which exhibit a polymorphic nature, are an attractive choice for developing boron-based two-dimensional materials. Among them, rhombohedral boron monosulfide (r-BS) has recently attracted considerable attention owing to its unique layered structure similar to that of transition metal dichalcogenides and a layer-dependent bandgap. However, experimental evidence that clarifies the charge carrier type in the r-BS semiconductor is lacking. In this study, we synthesized r-BS and evaluated its performance as a semiconductor by measuring the Seebeck coefficient and photo-electrochemical responses. The properties unique to p-type semiconductors were observed in both measurements, indicating that the synthesized r-BS is a p-type semiconductor. Moreover, a distinct Fano resonance was observed in Fourier transform infrared absorption spectroscopy, which was ascribed to the Fano resonance between the E(2) (TO) phonon mode and electrons in the band structures of r-BS, indicating that the p-type carrier was intrinsically doped in the synthesized r-BS. These results demonstrate the potential future application prospects of r-BS.https://www.mdpi.com/1420-3049/28/4/1896rhombohedral boron monosulfidetwo-dimensional materialsseebeck coefficient |
| spellingShingle | Norinobu Watanabe Keisuke Miyazaki Masayuki Toyoda Kotaro Takeyasu Naohito Tsujii Haruki Kusaka Akiyasu Yamamoto Susumu Saito Masashi Miyakawa Takashi Taniguchi Takashi Aizawa Takao Mori Masahiro Miyauchi Takahiro Kondo Rhombohedral Boron Monosulfide as a p-Type Semiconductor Molecules rhombohedral boron monosulfide two-dimensional materials seebeck coefficient |
| title | Rhombohedral Boron Monosulfide as a p-Type Semiconductor |
| title_full | Rhombohedral Boron Monosulfide as a p-Type Semiconductor |
| title_fullStr | Rhombohedral Boron Monosulfide as a p-Type Semiconductor |
| title_full_unstemmed | Rhombohedral Boron Monosulfide as a p-Type Semiconductor |
| title_short | Rhombohedral Boron Monosulfide as a p-Type Semiconductor |
| title_sort | rhombohedral boron monosulfide as a p type semiconductor |
| topic | rhombohedral boron monosulfide two-dimensional materials seebeck coefficient |
| url | https://www.mdpi.com/1420-3049/28/4/1896 |
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