Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials
Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5042327 |
| _version_ | 1818528015713304576 |
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| author | Ying Liu Zhenbing Tan Manohar Kumar T. S. Abhilash Guan-jun Liu Pertti Hakonen |
| author_facet | Ying Liu Zhenbing Tan Manohar Kumar T. S. Abhilash Guan-jun Liu Pertti Hakonen |
| author_sort | Ying Liu |
| collection | DOAJ |
| description | Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10−5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz. |
| first_indexed | 2024-12-11T06:44:06Z |
| format | Article |
| id | doaj.art-207dbb86dbbd473e89f7402ae82dfb53 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-11T06:44:06Z |
| publishDate | 2018-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-207dbb86dbbd473e89f7402ae82dfb532022-12-22T01:17:07ZengAIP Publishing LLCAPL Materials2166-532X2018-09-0169091102091102-710.1063/1.5042327004809APMDefects in h-BN tunnel barrier for local electrostatic probing of two dimensional materialsYing Liu0Zhenbing Tan1Manohar Kumar2T. S. Abhilash3Guan-jun Liu4Pertti Hakonen5Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, No. 109 Deya Road, 410073 Changsha, People’s Republic of ChinaLow Temperature Laboratory, Department of Applied Physics, Aalto University, Puumiehenkuja 2 B, 02150 Espoo, FinlandLow Temperature Laboratory, Department of Applied Physics, Aalto University, Puumiehenkuja 2 B, 02150 Espoo, FinlandLow Temperature Laboratory, Department of Applied Physics, Aalto University, Puumiehenkuja 2 B, 02150 Espoo, FinlandScience and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, No. 109 Deya Road, 410073 Changsha, People’s Republic of ChinaLow Temperature Laboratory, Department of Applied Physics, Aalto University, Puumiehenkuja 2 B, 02150 Espoo, FinlandDefects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differential conductance, we have characterized the electrical properties of h-BN defects in vertical graphene-h-BN-Cr/Au tunnel junctions in terms of low frequency current noise. Our results indicate a charge sensitivity of 1.5×10−5 e/Hz at 10 Hz, which is equal to good metallic single electron transistors. The noise spectra at low frequency are governed by a few two-level fluctuators. For variations in the electrochemical potential, we achieve a sensitivity of 0.8 μeV/Hz.http://dx.doi.org/10.1063/1.5042327 |
| spellingShingle | Ying Liu Zhenbing Tan Manohar Kumar T. S. Abhilash Guan-jun Liu Pertti Hakonen Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials APL Materials |
| title | Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials |
| title_full | Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials |
| title_fullStr | Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials |
| title_full_unstemmed | Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials |
| title_short | Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials |
| title_sort | defects in h bn tunnel barrier for local electrostatic probing of two dimensional materials |
| url | http://dx.doi.org/10.1063/1.5042327 |
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