Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Defects in h-BN tunnel barrier for local electrostatic probing of two dimensional materials

Defects in the hexagonal boron nitride (h-BN) layer can facilitate the tunneling current through thick h-BN tunneling barriers. We have investigated such current-mediating defects as local probes for materials in two dimensional heterostructure stacks. Besides IV characteristics and negative differe...

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Bibliographic Details
Main Authors: Ying Liu, Zhenbing Tan, Manohar Kumar, T. S. Abhilash, Guan-jun Liu, Pertti Hakonen
Format: Article
Language:English
Published: AIP Publishing LLC 2018-09-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5042327

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