Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer
GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm...
| Main Authors: | , , , |
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| Format: | Article |
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AIMS Press
2015-05-01
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| Series: | AIMS Materials Science |
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| Online Access: | http://www.aimspress.com/Materials/article/211/fulltext.html |
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| author | Jonathan P. Hayton Andrew R.J. Marshall Michael D. Thompson Anthony Krier |
| author_facet | Jonathan P. Hayton Andrew R.J. Marshall Michael D. Thompson Anthony Krier |
| author_sort | Jonathan P. Hayton |
| collection | DOAJ |
| description | GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates. |
| first_indexed | 2024-12-10T18:03:49Z |
| format | Article |
| id | doaj.art-208a309895c64f9298b2d59efc53dc19 |
| institution | Directory Open Access Journal |
| issn | 2372-0484 |
| language | English |
| last_indexed | 2024-12-10T18:03:49Z |
| publishDate | 2015-05-01 |
| publisher | AIMS Press |
| record_format | Article |
| series | AIMS Materials Science |
| spelling | doaj.art-208a309895c64f9298b2d59efc53dc192022-12-22T01:38:41ZengAIMS PressAIMS Materials Science2372-04842015-05-0122869610.3934/matersci.2015.2.8620150205Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit bufferJonathan P. Hayton0Andrew R.J. Marshall1Michael D. Thompson2Anthony Krier3Physics Department, Lancaster University, Lancaster, LA1 4YB, UKPhysics Department, Lancaster University, Lancaster, LA1 4YB, UKPhysics Department, Lancaster University, Lancaster, LA1 4YB, UKPhysics Department, Lancaster University, Lancaster, LA1 4YB, UKGaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.http://www.aimspress.com/Materials/article/211/fulltext.htmlphotoluminescenceIMFInterfacial Misfit ArrayGaSbAlGaSbInGaSbQuantum WellMQW |
| spellingShingle | Jonathan P. Hayton Andrew R.J. Marshall Michael D. Thompson Anthony Krier Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer AIMS Materials Science photoluminescence IMF Interfacial Misfit Array GaSb AlGaSb InGaSb Quantum Well MQW |
| title | Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer |
| title_full | Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer |
| title_fullStr | Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer |
| title_full_unstemmed | Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer |
| title_short | Characterisation of Ga<sub>1-x</sub>In<sub>x</sub>Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer |
| title_sort | characterisation of ga sub 1 x sub in sub x sub sb quantum wells x 0 3 grown on gaas using algasb interface misfit buffer |
| topic | photoluminescence IMF Interfacial Misfit Array GaSb AlGaSb InGaSb Quantum Well MQW |
| url | http://www.aimspress.com/Materials/article/211/fulltext.html |
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