Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemic...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5144507 |
| _version_ | 1818035731368509440 |
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| author | Xi Zhang Hideki Takeuchi Daniel Connelly Marek Hytha Robert J. Mears Leonard M. Rubin Tsu-Jae King Liu |
| author_facet | Xi Zhang Hideki Takeuchi Daniel Connelly Marek Hytha Robert J. Mears Leonard M. Rubin Tsu-Jae King Liu |
| author_sort | Xi Zhang |
| collection | DOAJ |
| description | The effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemical analyses by x-ray photoelectron spectroscopy. It is found that both oxygen-inserted (OI) layers and F can reduce ΦBp due to Ti 2p and Si 2p binding energy shifts before forming gas anneal (FGA) and due to retarded Pt diffusion into Si (facilitating low-ΦBp Pt mono-silicide formation) during FGA. The experimental findings also suggest that OI layers are more effective than F for reducing ΦBp. |
| first_indexed | 2024-12-10T06:59:43Z |
| format | Article |
| id | doaj.art-209540c359824d6a876bb60c9e42268d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T06:59:43Z |
| publishDate | 2020-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-209540c359824d6a876bb60c9e42268d2022-12-22T01:58:21ZengAIP Publishing LLCAIP Advances2158-32262020-06-01106065310065310-810.1063/1.5144507Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantationXi Zhang0Hideki Takeuchi1Daniel Connelly2Marek Hytha3Robert J. Mears4Leonard M. Rubin5Tsu-Jae King Liu6Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAAtomera, Inc., Los Gatos, California 95035, USAAtomera, Inc., Los Gatos, California 95035, USAAtomera, Inc., Los Gatos, California 95035, USAAtomera, Inc., Los Gatos, California 95035, USAAxcelis Technologies, Inc., Beverly, Massachusetts 01915, USADepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USAThe effects of oxygen-insertion technology and low-energy fluorine (F) implantation on the Schottky barrier height (ΦBp) of a Pt/Ti/p-type Si metal–semiconductor contact are studied via electrical characterizations of Schottky diodes, physical analyses by secondary ion mass spectrometry , and chemical analyses by x-ray photoelectron spectroscopy. It is found that both oxygen-inserted (OI) layers and F can reduce ΦBp due to Ti 2p and Si 2p binding energy shifts before forming gas anneal (FGA) and due to retarded Pt diffusion into Si (facilitating low-ΦBp Pt mono-silicide formation) during FGA. The experimental findings also suggest that OI layers are more effective than F for reducing ΦBp.http://dx.doi.org/10.1063/1.5144507 |
| spellingShingle | Xi Zhang Hideki Takeuchi Daniel Connelly Marek Hytha Robert J. Mears Leonard M. Rubin Tsu-Jae King Liu Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation AIP Advances |
| title | Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation |
| title_full | Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation |
| title_fullStr | Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation |
| title_full_unstemmed | Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation |
| title_short | Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation |
| title_sort | tuning of schottky barrier height using oxygen inserted oi layers and fluorine implantation |
| url | http://dx.doi.org/10.1063/1.5144507 |
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