Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method
ZnO thin films were fabricated by spray pyrolysis (SP) method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2016-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4942977 |
| _version_ | 1811295336327544832 |
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| author | C. Panatarani S. Fitriyadi N. Balasubramanian N. S. Parmar I. M. Joni |
| author_facet | C. Panatarani S. Fitriyadi N. Balasubramanian N. S. Parmar I. M. Joni |
| author_sort | C. Panatarani |
| collection | DOAJ |
| description | ZnO thin films were fabricated by spray pyrolysis (SP) method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The photoluminescence (PL) with excitation wave length of 260 nm shows that ZnO:Ga and ZnO:N films emitted UV emission at ∼393 and ∼388 nm, respectively and the films resistivity was 7.12 and 12.80 Ohm-cm respectively. The electroluminescence of the p-ZnO : N/n-ZnO:Ga/ITO structure was obtained by applying forward bias of 5 volt with 30 mA current, resulting in a 3.35 volt threshold bias with the peak electroluminescence in UV-blue range. |
| first_indexed | 2024-04-13T05:31:53Z |
| format | Article |
| id | doaj.art-20aeaa9d5dca4eab9b61d8253ad3bd7e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T05:31:53Z |
| publishDate | 2016-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-20aeaa9d5dca4eab9b61d8253ad3bd7e2022-12-22T03:00:25ZengAIP Publishing LLCAIP Advances2158-32262016-02-0162025121025121-1010.1063/1.4942977084602ADVPreparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis methodC. Panatarani0S. Fitriyadi1N. Balasubramanian2N. S. Parmar3I. M. Joni4Department of Physics, Padjadjaran University, Jl. Raya Bandung-Sumedang KM 21, Jatinangor 4536, IndonesiaDepartment of Physics, Padjadjaran University, Jl. Raya Bandung-Sumedang KM 21, Jatinangor 4536, IndonesiaDepartment of Chemical Engineering, A.C. Tech Campus, Anna University, Chennai-600 025, IndiaCenter for Materials Research, Washington State University, Pullman, Washington 99164-2711, USADepartment of Physics, Padjadjaran University, Jl. Raya Bandung-Sumedang KM 21, Jatinangor 4536, IndonesiaZnO thin films were fabricated by spray pyrolysis (SP) method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The photoluminescence (PL) with excitation wave length of 260 nm shows that ZnO:Ga and ZnO:N films emitted UV emission at ∼393 and ∼388 nm, respectively and the films resistivity was 7.12 and 12.80 Ohm-cm respectively. The electroluminescence of the p-ZnO : N/n-ZnO:Ga/ITO structure was obtained by applying forward bias of 5 volt with 30 mA current, resulting in a 3.35 volt threshold bias with the peak electroluminescence in UV-blue range.http://dx.doi.org/10.1063/1.4942977 |
| spellingShingle | C. Panatarani S. Fitriyadi N. Balasubramanian N. S. Parmar I. M. Joni Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method AIP Advances |
| title | Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method |
| title_full | Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method |
| title_fullStr | Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method |
| title_full_unstemmed | Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method |
| title_short | Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method |
| title_sort | preparation and characterizations of electroluminescent p zno n n zno ga ito thin films by spray pyrolysis method |
| url | http://dx.doi.org/10.1063/1.4942977 |
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