The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid
A heterostructured nanocomposite MCM-41<SFA> was formed using the encapsulation method, where a silicon dioxide matrix—MCM-41 was the host matrix and synthetic fulvic acid was the organic guest. Using the method of nitrogen sorption/desorption, a high degree of monoporosity in the studied matr...
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MDPI AG
2023-04-01
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| author | Vitalii Maksymych Dariusz Calus Bohdan Seredyuk Glib Baryshnikov Rostislav Galagan Valentina Litvin Sławomir Bujnowski Piotr Domanowski Piotr Chabecki Fedir Ivashchyshyn |
| author_facet | Vitalii Maksymych Dariusz Calus Bohdan Seredyuk Glib Baryshnikov Rostislav Galagan Valentina Litvin Sławomir Bujnowski Piotr Domanowski Piotr Chabecki Fedir Ivashchyshyn |
| author_sort | Vitalii Maksymych |
| collection | DOAJ |
| description | A heterostructured nanocomposite MCM-41<SFA> was formed using the encapsulation method, where a silicon dioxide matrix—MCM-41 was the host matrix and synthetic fulvic acid was the organic guest. Using the method of nitrogen sorption/desorption, a high degree of monoporosity in the studied matrix was established, with a maximum for the distribution of its pores with radii of 1.42 nm. According to the results of an X-ray structural analysis, both the matrix and the encapsulate were characterized by an amorphous structure, and the absence of a manifestation of the guest component could be caused by its nanodispersity. The electrical, conductive, and polarization properties of the encapsulate were studied with impedance spectroscopy. The nature of the changes in the frequency behavior of the impedance, dielectric permittivity, and tangent of the dielectric loss angle under normal conditions, in a constant magnetic field, and under illumination, was established. The obtained results indicated the manifestation of photo- and magneto-resistive and capacitive effects. In the studied encapsulate, the combination of a high value of ε and a value of the tgδ of less than 1 in the low-frequency range was achieved, which is a prerequisite for the realization of a quantum electric energy storage device. A confirmation of the possibility of accumulating an electric charge was obtained by measuring the I-V characteristic, which took on a hysteresis behavior. |
| first_indexed | 2024-03-11T04:31:44Z |
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| id | doaj.art-20b29f1b608644e9823ebe1b209c3cc0 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-11T04:31:44Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
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| series | Sensors |
| spelling | doaj.art-20b29f1b608644e9823ebe1b209c3cc02023-11-17T21:19:58ZengMDPI AGSensors1424-82202023-04-01238416110.3390/s23084161The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic AcidVitalii Maksymych0Dariusz Calus1Bohdan Seredyuk2Glib Baryshnikov3Rostislav Galagan4Valentina Litvin5Sławomir Bujnowski6Piotr Domanowski7Piotr Chabecki8Fedir Ivashchyshyn9Institute of Applied Mathematics and Fundamental Sciences, Lviv Polytechnic National University, Bandera Str. 12, 79013 Lviv, UkraineFaculty of Electrical Engineering, Czestochowa University of Technology, ul. J.H. Dąbrowskiego 69, 42-201 Częstochowa, PolandFaculty of Rocket troops and Artillery, Hetman Petro Sahaidachnyi National Army Academy, 32 Heroes of Maidan Street, 79026 Lviv, UkraineDepartment of Chemistry and Nanomaterials Science, Bohdan Khmelnytsky National University, Blvd. Shevchnko 81, 18031 Cherkasy, UkraineDepartment of Chemistry and Nanomaterials Science, Bohdan Khmelnytsky National University, Blvd. Shevchnko 81, 18031 Cherkasy, UkraineDepartment of Chemistry and Nanomaterials Science, Bohdan Khmelnytsky National University, Blvd. Shevchnko 81, 18031 Cherkasy, UkraineFaculty of Mechanical Engineering, Bydgoszcz University of Science and Technology, 7 Kaliskiego Ave., 85-796 Bydgoszcz, PolandFaculty of Mechanical Engineering, Bydgoszcz University of Science and Technology, 7 Kaliskiego Ave., 85-796 Bydgoszcz, PolandFaculty of Electrical Engineering, Czestochowa University of Technology, ul. J.H. Dąbrowskiego 69, 42-201 Częstochowa, PolandInstitute of Applied Mathematics and Fundamental Sciences, Lviv Polytechnic National University, Bandera Str. 12, 79013 Lviv, UkraineA heterostructured nanocomposite MCM-41<SFA> was formed using the encapsulation method, where a silicon dioxide matrix—MCM-41 was the host matrix and synthetic fulvic acid was the organic guest. Using the method of nitrogen sorption/desorption, a high degree of monoporosity in the studied matrix was established, with a maximum for the distribution of its pores with radii of 1.42 nm. According to the results of an X-ray structural analysis, both the matrix and the encapsulate were characterized by an amorphous structure, and the absence of a manifestation of the guest component could be caused by its nanodispersity. The electrical, conductive, and polarization properties of the encapsulate were studied with impedance spectroscopy. The nature of the changes in the frequency behavior of the impedance, dielectric permittivity, and tangent of the dielectric loss angle under normal conditions, in a constant magnetic field, and under illumination, was established. The obtained results indicated the manifestation of photo- and magneto-resistive and capacitive effects. In the studied encapsulate, the combination of a high value of ε and a value of the tgδ of less than 1 in the low-frequency range was achieved, which is a prerequisite for the realization of a quantum electric energy storage device. A confirmation of the possibility of accumulating an electric charge was obtained by measuring the I-V characteristic, which took on a hysteresis behavior.https://www.mdpi.com/1424-8220/23/8/4161encapsulatesilicon dioxide matrixsynthetic fulvic acidimpedance spectroscopyphoto- and magneto-resistive and capacitive effectsquantum battery |
| spellingShingle | Vitalii Maksymych Dariusz Calus Bohdan Seredyuk Glib Baryshnikov Rostislav Galagan Valentina Litvin Sławomir Bujnowski Piotr Domanowski Piotr Chabecki Fedir Ivashchyshyn The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid Sensors encapsulate silicon dioxide matrix synthetic fulvic acid impedance spectroscopy photo- and magneto-resistive and capacitive effects quantum battery |
| title | The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid |
| title_full | The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid |
| title_fullStr | The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid |
| title_full_unstemmed | The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid |
| title_short | The Accumulation of Electrical Energy Due to the Quantum-Dimensional Effects and Quantum Amplification of Sensor Sensitivity in a Nanoporous SiO<sub>2</sub> Matrix Filled with Synthetic Fulvic Acid |
| title_sort | accumulation of electrical energy due to the quantum dimensional effects and quantum amplification of sensor sensitivity in a nanoporous sio sub 2 sub matrix filled with synthetic fulvic acid |
| topic | encapsulate silicon dioxide matrix synthetic fulvic acid impedance spectroscopy photo- and magneto-resistive and capacitive effects quantum battery |
| url | https://www.mdpi.com/1424-8220/23/8/4161 |
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