Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk bandgap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular be...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5041273 |
| _version_ | 1828822578076057600 |
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| author | Igor V. Pinchuk Thaddeus J. Asel Andrew Franson Tiancong Zhu Yuan-Ming Lu Leonard J. Brillson Ezekiel Johnston-Halperin Jay A. Gupta Roland K. Kawakami |
| author_facet | Igor V. Pinchuk Thaddeus J. Asel Andrew Franson Tiancong Zhu Yuan-Ming Lu Leonard J. Brillson Ezekiel Johnston-Halperin Jay A. Gupta Roland K. Kawakami |
| author_sort | Igor V. Pinchuk |
| collection | DOAJ |
| description | Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk bandgap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy to achieve uniform and continuous single-crystal films of Na3Bi(0001) on insulating Al2O3(0001) substrates and demonstrate electrical transport on films with 3.8 nm thickness (4 unit cells). The high material quality is confirmed through reflection high-energy electron diffraction, scanning tunneling microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. |
| first_indexed | 2024-12-12T13:17:46Z |
| format | Article |
| id | doaj.art-20b9f9b90d2947aabb80f471b376e511 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-12T13:17:46Z |
| publishDate | 2018-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-20b9f9b90d2947aabb80f471b376e5112022-12-22T00:23:23ZengAIP Publishing LLCAPL Materials2166-532X2018-08-0168086103086103-810.1063/1.5041273003808APMTopological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxyIgor V. Pinchuk0Thaddeus J. Asel1Andrew Franson2Tiancong Zhu3Yuan-Ming Lu4Leonard J. Brillson5Ezekiel Johnston-Halperin6Jay A. Gupta7Roland K. Kawakami8Department of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USAUltrathin films of Na3Bi on insulating substrates are desired for opening a bulk bandgap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy to achieve uniform and continuous single-crystal films of Na3Bi(0001) on insulating Al2O3(0001) substrates and demonstrate electrical transport on films with 3.8 nm thickness (4 unit cells). The high material quality is confirmed through reflection high-energy electron diffraction, scanning tunneling microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy.http://dx.doi.org/10.1063/1.5041273 |
| spellingShingle | Igor V. Pinchuk Thaddeus J. Asel Andrew Franson Tiancong Zhu Yuan-Ming Lu Leonard J. Brillson Ezekiel Johnston-Halperin Jay A. Gupta Roland K. Kawakami Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy APL Materials |
| title | Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy |
| title_full | Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy |
| title_fullStr | Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy |
| title_full_unstemmed | Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy |
| title_short | Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy |
| title_sort | topological dirac semimetal na3bi films in the ultrathin limit via alternating layer molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/1.5041273 |
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