A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source

Crystal monochromators are indispensable optical components for the majority of beamlines at synchrotron radiation facilities. Channel-cut monochromators are sometimes chosen to filter monochromatic X-ray beams by virtue of their ultrahigh angular stability. Nevertheless, high-accuracy polishing on...

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Main Authors: Zhen Hong, Qianshun Diao, Wei Xu, Qingxi Yuan, Junliang Yang, Zhongliang Li, Yongcheng Jiang, Changrui Zhang, Dongni Zhang, Fang Liu, Xiaowei Zhang, Peng Liu, Ye Tao, Weifan Sheng, Ming Li, Yidong Zhao
Format: Article
Language:English
Published: International Union of Crystallography 2023-01-01
Series:Journal of Synchrotron Radiation
Subjects:
Online Access:http://scripts.iucr.org/cgi-bin/paper?S1600577522011122
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author Zhen Hong
Qianshun Diao
Wei Xu
Qingxi Yuan
Junliang Yang
Zhongliang Li
Yongcheng Jiang
Changrui Zhang
Dongni Zhang
Fang Liu
Xiaowei Zhang
Peng Liu
Ye Tao
Weifan Sheng
Ming Li
Yidong Zhao
author_facet Zhen Hong
Qianshun Diao
Wei Xu
Qingxi Yuan
Junliang Yang
Zhongliang Li
Yongcheng Jiang
Changrui Zhang
Dongni Zhang
Fang Liu
Xiaowei Zhang
Peng Liu
Ye Tao
Weifan Sheng
Ming Li
Yidong Zhao
author_sort Zhen Hong
collection DOAJ
description Crystal monochromators are indispensable optical components for the majority of beamlines at synchrotron radiation facilities. Channel-cut monochromators are sometimes chosen to filter monochromatic X-ray beams by virtue of their ultrahigh angular stability. Nevertheless, high-accuracy polishing on the inner diffracting surfaces remains challenging, thus hampering their performance in preserving the coherence or wavefront of the photon beam. Herein, a magnetically controlled chemical–mechanical polishing (MC-CMP) approach has been successfully developed for fine polishing of the inner surfaces of channel-cut crystals. This MC-CMP process relieves the constraints of narrow working space dictated by small offset requirements and achieves near-perfect polishing on the surface of the crystals. Using this method, a high-quality surface with roughness of 0.614 nm (root mean square, r.m.s.) is obtained in a channel-cut crystal with 7 mm gap designed for beamlines at the High Energy Photon Source, a fourth-generation synchrotron radiation source under construction. On-line X-ray topography and rocking-curve measurements indicate that the stress residual layer on the crystal surface was removed. Firstly, the measured rocking-curve width is in good agreement with the theoretical value. Secondly, the peak reflectivity is very close to theoretical values. Thirdly, topographic images of the optics after polishing were uniform without any speckle or scratches. Only a nearly 2.5 nm-thick SiO2 layer was observed on the perfect crystalline matrix from high-resolution transmission electron microscopy photographs, indicating that the structure of the bulk material is defect- and dislocation-free. Future development of MC-CMP is promising for fabricating wavefront-preserving and ultra-stable channel-cut monochromators, which are crucial to exploit the merits of fourth-generation synchrotron radiation sources or hard X-ray free-electron lasers.
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spelling doaj.art-20ef160726d346aabb170fe0a626c6b82023-01-05T10:01:29ZengInternational Union of CrystallographyJournal of Synchrotron Radiation1600-57752023-01-01301848910.1107/S1600577522011122yi5130A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon SourceZhen Hong0Qianshun Diao1Wei Xu2Qingxi Yuan3Junliang Yang4Zhongliang Li5Yongcheng Jiang6Changrui Zhang7Dongni Zhang8Fang Liu9Xiaowei Zhang10Peng Liu11Ye Tao12Weifan Sheng13Ming Li14Yidong Zhao15Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaShanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201800, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaUniversity of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaBeijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of ChinaCrystal monochromators are indispensable optical components for the majority of beamlines at synchrotron radiation facilities. Channel-cut monochromators are sometimes chosen to filter monochromatic X-ray beams by virtue of their ultrahigh angular stability. Nevertheless, high-accuracy polishing on the inner diffracting surfaces remains challenging, thus hampering their performance in preserving the coherence or wavefront of the photon beam. Herein, a magnetically controlled chemical–mechanical polishing (MC-CMP) approach has been successfully developed for fine polishing of the inner surfaces of channel-cut crystals. This MC-CMP process relieves the constraints of narrow working space dictated by small offset requirements and achieves near-perfect polishing on the surface of the crystals. Using this method, a high-quality surface with roughness of 0.614 nm (root mean square, r.m.s.) is obtained in a channel-cut crystal with 7 mm gap designed for beamlines at the High Energy Photon Source, a fourth-generation synchrotron radiation source under construction. On-line X-ray topography and rocking-curve measurements indicate that the stress residual layer on the crystal surface was removed. Firstly, the measured rocking-curve width is in good agreement with the theoretical value. Secondly, the peak reflectivity is very close to theoretical values. Thirdly, topographic images of the optics after polishing were uniform without any speckle or scratches. Only a nearly 2.5 nm-thick SiO2 layer was observed on the perfect crystalline matrix from high-resolution transmission electron microscopy photographs, indicating that the structure of the bulk material is defect- and dislocation-free. Future development of MC-CMP is promising for fabricating wavefront-preserving and ultra-stable channel-cut monochromators, which are crucial to exploit the merits of fourth-generation synchrotron radiation sources or hard X-ray free-electron lasers.http://scripts.iucr.org/cgi-bin/paper?S1600577522011122channel-cut crystalmc-cmphigh-accuracy roughnessresidue-stress freescratch- and speckle-free
spellingShingle Zhen Hong
Qianshun Diao
Wei Xu
Qingxi Yuan
Junliang Yang
Zhongliang Li
Yongcheng Jiang
Changrui Zhang
Dongni Zhang
Fang Liu
Xiaowei Zhang
Peng Liu
Ye Tao
Weifan Sheng
Ming Li
Yidong Zhao
A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source
Journal of Synchrotron Radiation
channel-cut crystal
mc-cmp
high-accuracy roughness
residue-stress free
scratch- and speckle-free
title A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source
title_full A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source
title_fullStr A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source
title_full_unstemmed A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source
title_short A magnetically controlled chemical–mechanical polishing (MC-CMP) approach for fabricating channel-cut silicon crystal optics for the High Energy Photon Source
title_sort magnetically controlled chemical mechanical polishing mc cmp approach for fabricating channel cut silicon crystal optics for the high energy photon source
topic channel-cut crystal
mc-cmp
high-accuracy roughness
residue-stress free
scratch- and speckle-free
url http://scripts.iucr.org/cgi-bin/paper?S1600577522011122
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