Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
AgNbO<sub>3</sub> (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a...
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MDPI AG
2024-02-01
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author | Dengxiaojiang Zhao Zhenpei Chen Borui Li Shi Feng Nengneng Luo |
author_facet | Dengxiaojiang Zhao Zhenpei Chen Borui Li Shi Feng Nengneng Luo |
author_sort | Dengxiaojiang Zhao |
collection | DOAJ |
description | AgNbO<sub>3</sub> (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a flux method, with dimensions of 5 × 5 × 3 mm<sup>3</sup>. A systematic investigation into the crystal structure, domain structure, and electrical properties of a [001]-oriented AN single crystal was conducted. X-ray diffraction and domain structure analysis revealed an orthorhombic phase structure at room temperature. Stripe-like 90° domains aligning parallel to the [110] direction with a thickness of approximately 10–20 μm were observed using a polarized light microscope. The temperature dependence of dielectric permittivity showed M1-M2, M2-M3, and M3-O phase transitions along with increasing temperature, but the phase transition temperatures were slightly higher than those of ceramic. The AN single crystal also exhibited double polarization-electric field (<i>P</i>-<i>E</i>) hysteresis loops, which enabled good recoverable energy-storage density and efficiency comparable to ceramic. Additionally, double <i>P</i>-<i>E</i> loops were kept stable at various temperatures and frequencies, demonstrating robust stability and confirming typical antiferroelectric characteristics. Our work provides valuable insights into understanding the fundamental antiferroelectric properties of AN-based materials. |
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issn | 2073-4352 |
language | English |
last_indexed | 2024-04-24T18:24:15Z |
publishDate | 2024-02-01 |
publisher | MDPI AG |
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series | Crystals |
spelling | doaj.art-210bed53707b429289812f2211218cbd2024-03-27T13:32:26ZengMDPI AGCrystals2073-43522024-02-0114323510.3390/cryst14030235Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single CrystalDengxiaojiang Zhao0Zhenpei Chen1Borui Li2Shi Feng3Nengneng Luo4State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaAgNbO<sub>3</sub> (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a flux method, with dimensions of 5 × 5 × 3 mm<sup>3</sup>. A systematic investigation into the crystal structure, domain structure, and electrical properties of a [001]-oriented AN single crystal was conducted. X-ray diffraction and domain structure analysis revealed an orthorhombic phase structure at room temperature. Stripe-like 90° domains aligning parallel to the [110] direction with a thickness of approximately 10–20 μm were observed using a polarized light microscope. The temperature dependence of dielectric permittivity showed M1-M2, M2-M3, and M3-O phase transitions along with increasing temperature, but the phase transition temperatures were slightly higher than those of ceramic. The AN single crystal also exhibited double polarization-electric field (<i>P</i>-<i>E</i>) hysteresis loops, which enabled good recoverable energy-storage density and efficiency comparable to ceramic. Additionally, double <i>P</i>-<i>E</i> loops were kept stable at various temperatures and frequencies, demonstrating robust stability and confirming typical antiferroelectric characteristics. Our work provides valuable insights into understanding the fundamental antiferroelectric properties of AN-based materials.https://www.mdpi.com/2073-4352/14/3/235AgNbO<sub>3</sub>single crystalantiferroelectricdomain |
spellingShingle | Dengxiaojiang Zhao Zhenpei Chen Borui Li Shi Feng Nengneng Luo Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal Crystals AgNbO<sub>3</sub> single crystal antiferroelectric domain |
title | Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal |
title_full | Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal |
title_fullStr | Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal |
title_full_unstemmed | Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal |
title_short | Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal |
title_sort | growth structure and electrical properties of agnbo sub 3 sub antiferroelectric single crystal |
topic | AgNbO<sub>3</sub> single crystal antiferroelectric domain |
url | https://www.mdpi.com/2073-4352/14/3/235 |
work_keys_str_mv | AT dengxiaojiangzhao growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal AT zhenpeichen growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal AT boruili growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal AT shifeng growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal AT nengnengluo growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal |