Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal

AgNbO<sub>3</sub> (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a...

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Main Authors: Dengxiaojiang Zhao, Zhenpei Chen, Borui Li, Shi Feng, Nengneng Luo
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/14/3/235
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author Dengxiaojiang Zhao
Zhenpei Chen
Borui Li
Shi Feng
Nengneng Luo
author_facet Dengxiaojiang Zhao
Zhenpei Chen
Borui Li
Shi Feng
Nengneng Luo
author_sort Dengxiaojiang Zhao
collection DOAJ
description AgNbO<sub>3</sub> (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a flux method, with dimensions of 5 × 5 × 3 mm<sup>3</sup>. A systematic investigation into the crystal structure, domain structure, and electrical properties of a [001]-oriented AN single crystal was conducted. X-ray diffraction and domain structure analysis revealed an orthorhombic phase structure at room temperature. Stripe-like 90° domains aligning parallel to the [110] direction with a thickness of approximately 10–20 μm were observed using a polarized light microscope. The temperature dependence of dielectric permittivity showed M1-M2, M2-M3, and M3-O phase transitions along with increasing temperature, but the phase transition temperatures were slightly higher than those of ceramic. The AN single crystal also exhibited double polarization-electric field (<i>P</i>-<i>E</i>) hysteresis loops, which enabled good recoverable energy-storage density and efficiency comparable to ceramic. Additionally, double <i>P</i>-<i>E</i> loops were kept stable at various temperatures and frequencies, demonstrating robust stability and confirming typical antiferroelectric characteristics. Our work provides valuable insights into understanding the fundamental antiferroelectric properties of AN-based materials.
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spelling doaj.art-210bed53707b429289812f2211218cbd2024-03-27T13:32:26ZengMDPI AGCrystals2073-43522024-02-0114323510.3390/cryst14030235Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single CrystalDengxiaojiang Zhao0Zhenpei Chen1Borui Li2Shi Feng3Nengneng Luo4State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaState Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaAgNbO<sub>3</sub> (AN) lead-free antiferroelectric material has attracted great attention in recent years. However, little focus has been directed toward a single crystal that can provide more basic information. In this study, we successfully grew high-quality AN single crystals, using a flux method, with dimensions of 5 × 5 × 3 mm<sup>3</sup>. A systematic investigation into the crystal structure, domain structure, and electrical properties of a [001]-oriented AN single crystal was conducted. X-ray diffraction and domain structure analysis revealed an orthorhombic phase structure at room temperature. Stripe-like 90° domains aligning parallel to the [110] direction with a thickness of approximately 10–20 μm were observed using a polarized light microscope. The temperature dependence of dielectric permittivity showed M1-M2, M2-M3, and M3-O phase transitions along with increasing temperature, but the phase transition temperatures were slightly higher than those of ceramic. The AN single crystal also exhibited double polarization-electric field (<i>P</i>-<i>E</i>) hysteresis loops, which enabled good recoverable energy-storage density and efficiency comparable to ceramic. Additionally, double <i>P</i>-<i>E</i> loops were kept stable at various temperatures and frequencies, demonstrating robust stability and confirming typical antiferroelectric characteristics. Our work provides valuable insights into understanding the fundamental antiferroelectric properties of AN-based materials.https://www.mdpi.com/2073-4352/14/3/235AgNbO<sub>3</sub>single crystalantiferroelectricdomain
spellingShingle Dengxiaojiang Zhao
Zhenpei Chen
Borui Li
Shi Feng
Nengneng Luo
Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
Crystals
AgNbO<sub>3</sub>
single crystal
antiferroelectric
domain
title Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
title_full Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
title_fullStr Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
title_full_unstemmed Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
title_short Growth, Structure, and Electrical Properties of AgNbO<sub>3</sub> Antiferroelectric Single Crystal
title_sort growth structure and electrical properties of agnbo sub 3 sub antiferroelectric single crystal
topic AgNbO<sub>3</sub>
single crystal
antiferroelectric
domain
url https://www.mdpi.com/2073-4352/14/3/235
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AT boruili growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal
AT shifeng growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal
AT nengnengluo growthstructureandelectricalpropertiesofagnbosub3subantiferroelectricsinglecrystal