Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors
Conduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 μm) and different channel lengths (L=5, 10, 25, 50 and 100 μm) are measured and analysis. Firstly, dependences of threshold voltage and field...
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| Format: | Article |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9060960/ |
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| author | Yuan Liu Yu-Xuan Huang Sunbin Deng Man Wong Hoi-Sing Kwok Rongsheng Chen |
| author_facet | Yuan Liu Yu-Xuan Huang Sunbin Deng Man Wong Hoi-Sing Kwok Rongsheng Chen |
| author_sort | Yuan Liu |
| collection | DOAJ |
| description | Conduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 μm) and different channel lengths (L=5, 10, 25, 50 and 100 μm) are measured and analysis. Firstly, dependences of threshold voltage and field effect mobility on channel length are examined. With decreasing channel length, the threshold voltage shifts to the negative direction which may attribute to carrier diffusion from source/drain to the intrinsic device channel. In addition, significant degradation of field effect mobility is observed in short channel device which are induced by the presence of series contact resistance. The value of contact resistance has also been extracted. Secondly, the drain current noise power spectral densities (S<sub>ID</sub>) are measured at varied effective gate voltages. The measured noises follow a 1/f<sup>γ</sup> and y is about -1.1. Moreover, the normalized noises (S<sub>ID</sub>/I<sub>ds</sub>) are dependent linearly on the inverse of channel length and the slope is about -0.75. Finally, the dominant mechanism of low frequency noise in ITO-stabilized ZnO thin film transistor are examined. The slope of normalized noise against effective gate voltage are extracted, which are varied from -1.03 to -1.84 with decreasing channel length and thus it indicates that ITO-stabilized ZnO TFTs varied from bulk dominated devices to interface dominated devices. By using of ΔN-Δμ model, the normalized noises are simulated by considering of contact resistance. Several noise parameters (flat-band voltage noise spectral density, etc) are extracted and analysis. |
| first_indexed | 2024-12-14T10:17:11Z |
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| id | doaj.art-214d84bbc8aa4595a770935d6098a60d |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T10:17:11Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-214d84bbc8aa4595a770935d6098a60d2022-12-21T23:06:45ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01843544110.1109/JEDS.2020.29862319060960Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film TransistorsYuan Liu0https://orcid.org/0000-0002-7289-2103Yu-Xuan Huang1https://orcid.org/0000-0001-5223-6216Sunbin Deng2https://orcid.org/0000-0002-3428-3120Man Wong3https://orcid.org/0000-0002-2837-6646Hoi-Sing Kwok4Rongsheng Chen5https://orcid.org/0000-0002-7247-8420School of Automation, Guangdong University of Technology, Guangzhou, ChinaSchool of Automation, Guangdong University of Technology, Guangzhou, ChinaDepartment of Electronic and Computer Engineering, State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong KongDepartment of Electronic and Computer Engineering, State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong KongDepartment of Electronic and Computer Engineering, State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong KongSchool of Microelectronics, South China University of Technology, Guangzhou, ChinaConduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 μm) and different channel lengths (L=5, 10, 25, 50 and 100 μm) are measured and analysis. Firstly, dependences of threshold voltage and field effect mobility on channel length are examined. With decreasing channel length, the threshold voltage shifts to the negative direction which may attribute to carrier diffusion from source/drain to the intrinsic device channel. In addition, significant degradation of field effect mobility is observed in short channel device which are induced by the presence of series contact resistance. The value of contact resistance has also been extracted. Secondly, the drain current noise power spectral densities (S<sub>ID</sub>) are measured at varied effective gate voltages. The measured noises follow a 1/f<sup>γ</sup> and y is about -1.1. Moreover, the normalized noises (S<sub>ID</sub>/I<sub>ds</sub>) are dependent linearly on the inverse of channel length and the slope is about -0.75. Finally, the dominant mechanism of low frequency noise in ITO-stabilized ZnO thin film transistor are examined. The slope of normalized noise against effective gate voltage are extracted, which are varied from -1.03 to -1.84 with decreasing channel length and thus it indicates that ITO-stabilized ZnO TFTs varied from bulk dominated devices to interface dominated devices. By using of ΔN-Δμ model, the normalized noises are simulated by considering of contact resistance. Several noise parameters (flat-band voltage noise spectral density, etc) are extracted and analysis.https://ieeexplore.ieee.org/document/9060960/ITO-stabilized ZnOthin film transistorlow frequency noisechannel lengththreshold voltagefield effect mobility |
| spellingShingle | Yuan Liu Yu-Xuan Huang Sunbin Deng Man Wong Hoi-Sing Kwok Rongsheng Chen Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors IEEE Journal of the Electron Devices Society ITO-stabilized ZnO thin film transistor low frequency noise channel length threshold voltage field effect mobility |
| title | Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors |
| title_full | Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors |
| title_fullStr | Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors |
| title_full_unstemmed | Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors |
| title_short | Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors |
| title_sort | dimension scaling effects on conduction and low frequency noise characteristics of ito stabilized zno thin film transistors |
| topic | ITO-stabilized ZnO thin film transistor low frequency noise channel length threshold voltage field effect mobility |
| url | https://ieeexplore.ieee.org/document/9060960/ |
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