Heteroepitaxial Ge-on-Si by DC magnetron sputtering

Heteroepitaxial Ge-on-Si by DC magnetron sputtering

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C....

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Bibliographic Details
Main Authors: Martin Steglich, Christian Patzig, Lutz Berthold, Frank Schrempel, Kevin Füchsel, Thomas Höche, Ernst-Bernhard Kley, Andreas Tünnermann
Format: Article
Language:English
Published: AIP Publishing LLC 2013-07-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4813841

Internet

http://link.aip.org/link/doi/10.1063/1.4813841

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