An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications
The direct current (DC) circuit breaker based on semiconductor power devices is one of the critical components in multiterminal flexible high voltage DC transmission technology. A press pack injection enhanced gate transistor (IEGT) can realize a low on-state voltage similar to a gate turn-off (GTO)...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9144233/ |
| _version_ | 1819158365308190720 |
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| author | Xin Liu Litong Wang Guishu Liang Lei Qi |
| author_facet | Xin Liu Litong Wang Guishu Liang Lei Qi |
| author_sort | Xin Liu |
| collection | DOAJ |
| description | The direct current (DC) circuit breaker based on semiconductor power devices is one of the critical components in multiterminal flexible high voltage DC transmission technology. A press pack injection enhanced gate transistor (IEGT) can realize a low on-state voltage similar to a gate turn-off (GTO) thyristor while achieving better high current turn-off capability and wider safety operating area than an IGBT. Therefore, an IEGT is a promising candidate for high voltage DC circuit breaker applications. The fault current conducted by devices in DC circuit breaker applications is 4~6 times the device rated current, which brings great risks to reliable operation. Optimizing the device turn-off characteristics and then realizing reliable operation are indispensable parts of DC circuit breaker design. For analyzing the high current turn-off characteristics under the working conditions of a DC circuit breaker, an IEGT model is proposed in this paper. In the model, a simple method for predicting the static-state I-U characteristics is established. In addition, based on the differences in the gate structures of IEGTs and IGBTs and the influence of the gate structure on the nonlinear capacitances between device terminals, the nonlinear capacitances are greatly improved to better describe the turn-off transient process. Subsequently, the model is verified by experiments. The model is expected to be a convenient simulation tool for designing a high voltage DC circuit breaker with IEGTs. |
| first_indexed | 2024-12-22T16:23:30Z |
| format | Article |
| id | doaj.art-216e4794bcf844789fa49d97c0abbb2a |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T16:23:30Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-216e4794bcf844789fa49d97c0abbb2a2022-12-21T18:20:12ZengIEEEIEEE Access2169-35362020-01-01813132713133910.1109/ACCESS.2020.30104179144233An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker ApplicationsXin Liu0https://orcid.org/0000-0002-1756-887XLitong Wang1https://orcid.org/0000-0003-0238-5496Guishu Liang2https://orcid.org/0000-0003-4239-715XLei Qi3https://orcid.org/0000-0002-5175-7607Department of Electrical Engineering, North China Electric Power University, Baoding, ChinaDepartment of Electrical Engineering, North China Electric Power University, Baoding, ChinaDepartment of Electrical Engineering, North China Electric Power University, Baoding, ChinaState Key Laboratory for Alternate Electrical Power System With Renewable Energy Sources, North China Electric Power University, Beijing, ChinaThe direct current (DC) circuit breaker based on semiconductor power devices is one of the critical components in multiterminal flexible high voltage DC transmission technology. A press pack injection enhanced gate transistor (IEGT) can realize a low on-state voltage similar to a gate turn-off (GTO) thyristor while achieving better high current turn-off capability and wider safety operating area than an IGBT. Therefore, an IEGT is a promising candidate for high voltage DC circuit breaker applications. The fault current conducted by devices in DC circuit breaker applications is 4~6 times the device rated current, which brings great risks to reliable operation. Optimizing the device turn-off characteristics and then realizing reliable operation are indispensable parts of DC circuit breaker design. For analyzing the high current turn-off characteristics under the working conditions of a DC circuit breaker, an IEGT model is proposed in this paper. In the model, a simple method for predicting the static-state I-U characteristics is established. In addition, based on the differences in the gate structures of IEGTs and IGBTs and the influence of the gate structure on the nonlinear capacitances between device terminals, the nonlinear capacitances are greatly improved to better describe the turn-off transient process. Subsequently, the model is verified by experiments. The model is expected to be a convenient simulation tool for designing a high voltage DC circuit breaker with IEGTs.https://ieeexplore.ieee.org/document/9144233/High voltage direct current (DC) circuit breakerhigh current turn-off characteristicspress pack injection enhanced gate transistor (IEGT)IEGT modelstatic-state output characteristicsnonlinear capacitance |
| spellingShingle | Xin Liu Litong Wang Guishu Liang Lei Qi An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications IEEE Access High voltage direct current (DC) circuit breaker high current turn-off characteristics press pack injection enhanced gate transistor (IEGT) IEGT model static-state output characteristics nonlinear capacitance |
| title | An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications |
| title_full | An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications |
| title_fullStr | An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications |
| title_full_unstemmed | An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications |
| title_short | An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications |
| title_sort | iegt model for analyzing the high current turn off characteristics in dc circuit breaker applications |
| topic | High voltage direct current (DC) circuit breaker high current turn-off characteristics press pack injection enhanced gate transistor (IEGT) IEGT model static-state output characteristics nonlinear capacitance |
| url | https://ieeexplore.ieee.org/document/9144233/ |
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