An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications

An IEGT Model for Analyzing the High Current Turn-off Characteristics in DC Circuit Breaker Applications

The direct current (DC) circuit breaker based on semiconductor power devices is one of the critical components in multiterminal flexible high voltage DC transmission technology. A press pack injection enhanced gate transistor (IEGT) can realize a low on-state voltage similar to a gate turn-off (GTO)...

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Bibliographic Details
Main Authors: Xin Liu, Litong Wang, Guishu Liang, Lei Qi
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
High voltage direct current (DC) circuit breaker
high current turn-off characteristics
press pack injection enhanced gate transistor (IEGT)
IEGT model
static-state output characteristics
nonlinear capacitance
Online Access:https://ieeexplore.ieee.org/document/9144233/

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