A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect
Abstract Recent achievements in semiconductor surface‐enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra‐sensitive semiconductor SERS materials is a high‐priority task. Here, a new semiconductor SERS‐a...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-06-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.201900310 |
| _version_ | 1818954269757276160 |
|---|---|
| author | Lili Yang Yusi Peng Yong Yang Jianjun Liu Haoliang Huang Bohan Yu Jimin Zhao Yalin Lu Zhengren Huang Zhiyuan Li John R. Lombardi |
| author_facet | Lili Yang Yusi Peng Yong Yang Jianjun Liu Haoliang Huang Bohan Yu Jimin Zhao Yalin Lu Zhengren Huang Zhiyuan Li John R. Lombardi |
| author_sort | Lili Yang |
| collection | DOAJ |
| description | Abstract Recent achievements in semiconductor surface‐enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra‐sensitive semiconductor SERS materials is a high‐priority task. Here, a new semiconductor SERS‐active substrate, Ta2O5, is developed and an important strategy, the “coupled resonance” effect, is presented, to optimize the SERS performance of semiconductor materials by energy band engineering. The optimized Mo‐doped Ta2O5 substrate exhibits a remarkable SERS sensitivity with an enhancement factor of 2.2 × 107 and a very low detection limit of 9 × 10−9 m for methyl violet (MV) molecules, demonstrating one of the highest sensitivities among those reported for semiconductor SERS substrates. This remarkable enhancement can be attributed to the synergistic resonance enhancement of three components under 532 nm laser excitation: i) MV molecular resonance, ii) photoinduced charge transfer resonance between MV molecules and Ta2O5 nanorods, and iii) electromagnetic enhancement around the “gap” and “tip” of anisotropic Ta2O5 nanorods. Furthermore, it is discovered that the concomitant photoinduced degradation of the probed molecules in the time‐scale of SERS detection is a non‐negligible factor that limits the SERS performance of semiconductors with photocatalytic activity. |
| first_indexed | 2024-12-20T10:19:29Z |
| format | Article |
| id | doaj.art-21738f31005242e0b15a9a8f7f9413e4 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-20T10:19:29Z |
| publishDate | 2019-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-21738f31005242e0b15a9a8f7f9413e42022-12-21T19:43:57ZengWileyAdvanced Science2198-38442019-06-01612n/an/a10.1002/advs.201900310A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance EffectLili Yang0Yusi Peng1Yong Yang2Jianjun Liu3Haoliang Huang4Bohan Yu5Jimin Zhao6Yalin Lu7Zhengren Huang8Zhiyuan Li9John R. Lombardi10State Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai 200050 P. R. ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai 200050 P. R. ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai 200050 P. R. ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai 200050 P. R. ChinaNational Synchrotron Radiation Laboratory University of Science and Technology of China Hefei 230026 P. R. ChinaUniversity of Chinese Academy of Sciences No.19(A) Yuquan Road Beijing 100049 P. R. ChinaUniversity of Chinese Academy of Sciences No.19(A) Yuquan Road Beijing 100049 P. R. ChinaNational Synchrotron Radiation Laboratory University of Science and Technology of China Hefei 230026 P. R. ChinaState Key Laboratory of High Performance Ceramics and Superfine Microstructures Shanghai Institute of Ceramics Chinese Academy of Sciences 1295 Dingxi Road Shanghai 200050 P. R. ChinaSouth China University of Technology Guangzhou 510640 Guangdong P. R. ChinaDepartment of Chemistry The City College of New York 160 Convent Avenue New York NY 10031 USAAbstract Recent achievements in semiconductor surface‐enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra‐sensitive semiconductor SERS materials is a high‐priority task. Here, a new semiconductor SERS‐active substrate, Ta2O5, is developed and an important strategy, the “coupled resonance” effect, is presented, to optimize the SERS performance of semiconductor materials by energy band engineering. The optimized Mo‐doped Ta2O5 substrate exhibits a remarkable SERS sensitivity with an enhancement factor of 2.2 × 107 and a very low detection limit of 9 × 10−9 m for methyl violet (MV) molecules, demonstrating one of the highest sensitivities among those reported for semiconductor SERS substrates. This remarkable enhancement can be attributed to the synergistic resonance enhancement of three components under 532 nm laser excitation: i) MV molecular resonance, ii) photoinduced charge transfer resonance between MV molecules and Ta2O5 nanorods, and iii) electromagnetic enhancement around the “gap” and “tip” of anisotropic Ta2O5 nanorods. Furthermore, it is discovered that the concomitant photoinduced degradation of the probed molecules in the time‐scale of SERS detection is a non‐negligible factor that limits the SERS performance of semiconductors with photocatalytic activity.https://doi.org/10.1002/advs.201900310energy band engineeringphotoinduced degradationsurface‐enhanced Raman scatteringthe “coupled resonance” effectultra‐sensitive Ta2O5 nanorod substrate |
| spellingShingle | Lili Yang Yusi Peng Yong Yang Jianjun Liu Haoliang Huang Bohan Yu Jimin Zhao Yalin Lu Zhengren Huang Zhiyuan Li John R. Lombardi A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect Advanced Science energy band engineering photoinduced degradation surface‐enhanced Raman scattering the “coupled resonance” effect ultra‐sensitive Ta2O5 nanorod substrate |
| title | A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect |
| title_full | A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect |
| title_fullStr | A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect |
| title_full_unstemmed | A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect |
| title_short | A Novel Ultra‐Sensitive Semiconductor SERS Substrate Boosted by the Coupled Resonance Effect |
| title_sort | novel ultra sensitive semiconductor sers substrate boosted by the coupled resonance effect |
| topic | energy band engineering photoinduced degradation surface‐enhanced Raman scattering the “coupled resonance” effect ultra‐sensitive Ta2O5 nanorod substrate |
| url | https://doi.org/10.1002/advs.201900310 |
| work_keys_str_mv | AT liliyang anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT yusipeng anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT yongyang anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT jianjunliu anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT haolianghuang anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT bohanyu anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT jiminzhao anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT yalinlu anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT zhengrenhuang anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT zhiyuanli anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT johnrlombardi anovelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT liliyang novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT yusipeng novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT yongyang novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT jianjunliu novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT haolianghuang novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT bohanyu novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT jiminzhao novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT yalinlu novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT zhengrenhuang novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT zhiyuanli novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect AT johnrlombardi novelultrasensitivesemiconductorserssubstrateboostedbythecoupledresonanceeffect |