Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes
The issue of destructive breakdown and high dark current in AlGaN ultraviolet avalanche photodiodes has conventionally been attributed to material defects, yet direct evidence supporting this claim has been absent. Examining damaged devices that experienced destructive breakdown revealed an intrigui...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0184670 |
| _version_ | 1827296666209746944 |
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| author | Fan Yang Fucheng Yang Jintong Xu Xiangyang Li |
| author_facet | Fan Yang Fucheng Yang Jintong Xu Xiangyang Li |
| author_sort | Fan Yang |
| collection | DOAJ |
| description | The issue of destructive breakdown and high dark current in AlGaN ultraviolet avalanche photodiodes has conventionally been attributed to material defects, yet direct evidence supporting this claim has been absent. Examining damaged devices that experienced destructive breakdown revealed an intriguing finding: post-treatment with a potent alkali resulted in the emergence of corrosion pits on the device’s surface. Subsequently, a dry etching process was implemented in the targeted area to eliminate the corrosion pit. Remarkably, the current–voltage measurement subsequent to this treatment showcased a complete restoration of the damaged device’s previous performance. This unequivocally indicates that the destructive breakdown was localized, and the point of punch-through could be precisely identified through the corrosion pit. Consequently, it is now firmly believed that material defects constitute the primary cause of destructive breakdown in these instances. |
| first_indexed | 2024-04-24T14:42:29Z |
| format | Article |
| id | doaj.art-218b029ede22489eac9314dd5cfd7a1d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-24T14:42:29Z |
| publishDate | 2024-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-218b029ede22489eac9314dd5cfd7a1d2024-04-02T20:29:18ZengAIP Publishing LLCAIP Advances2158-32262024-03-01143035307035307-410.1063/5.0184670Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodesFan Yang0Fucheng Yang1Jintong Xu2Xiangyang Li3Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of ChinaThe issue of destructive breakdown and high dark current in AlGaN ultraviolet avalanche photodiodes has conventionally been attributed to material defects, yet direct evidence supporting this claim has been absent. Examining damaged devices that experienced destructive breakdown revealed an intriguing finding: post-treatment with a potent alkali resulted in the emergence of corrosion pits on the device’s surface. Subsequently, a dry etching process was implemented in the targeted area to eliminate the corrosion pit. Remarkably, the current–voltage measurement subsequent to this treatment showcased a complete restoration of the damaged device’s previous performance. This unequivocally indicates that the destructive breakdown was localized, and the point of punch-through could be precisely identified through the corrosion pit. Consequently, it is now firmly believed that material defects constitute the primary cause of destructive breakdown in these instances.http://dx.doi.org/10.1063/5.0184670 |
| spellingShingle | Fan Yang Fucheng Yang Jintong Xu Xiangyang Li Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes AIP Advances |
| title | Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes |
| title_full | Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes |
| title_fullStr | Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes |
| title_full_unstemmed | Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes |
| title_short | Experimental identification of defect-induced destructive breakdown of AlGaN ultraviolet avalanche photodiodes |
| title_sort | experimental identification of defect induced destructive breakdown of algan ultraviolet avalanche photodiodes |
| url | http://dx.doi.org/10.1063/5.0184670 |
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