Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications
Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE). A bilayer metal configuration (Metal 1 / Metal 2) was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mec...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4943217 |
| _version_ | 1819152530773377024 |
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| author | R. W. Wu G. D. Yuan K. C. Wang T. B. Wei Z. Q. Liu G. H. Wang J. X. Wang J. M. Li |
| author_facet | R. W. Wu G. D. Yuan K. C. Wang T. B. Wei Z. Q. Liu G. H. Wang J. X. Wang J. M. Li |
| author_sort | R. W. Wu |
| collection | DOAJ |
| description | Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE). A bilayer metal configuration (Metal 1 / Metal 2) was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process. |
| first_indexed | 2024-12-22T14:50:46Z |
| format | Article |
| id | doaj.art-219e4385344845aa9881215ac0876b75 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T14:50:46Z |
| publishDate | 2016-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-219e4385344845aa9881215ac0876b752022-12-21T18:22:19ZengAIP Publishing LLCAIP Advances2158-32262016-02-0162025324025324-1310.1063/1.4943217094602ADVBilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applicationsR. W. Wu0G. D. Yuan1K. C. Wang2T. B. Wei3Z. Q. Liu4G. H. Wang5J. X. Wang6J. M. Li7Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory of Solid State Lighting, Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, P.R.ChinaSilicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE). A bilayer metal configuration (Metal 1 / Metal 2) was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.http://dx.doi.org/10.1063/1.4943217 |
| spellingShingle | R. W. Wu G. D. Yuan K. C. Wang T. B. Wei Z. Q. Liu G. H. Wang J. X. Wang J. M. Li Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications AIP Advances |
| title | Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications |
| title_full | Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications |
| title_fullStr | Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications |
| title_full_unstemmed | Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications |
| title_short | Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications |
| title_sort | bilayer metal assisted chemical etching of silicon microwire arrays for photovoltaic applications |
| url | http://dx.doi.org/10.1063/1.4943217 |
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