Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realizati...
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| Format: | Article |
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MDPI AG
2020-12-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/12/2098 |
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| author | Xiaojuan Lian Xinyi Shen Jinke Fu Zhixuan Gao Xiang Wan Xiaoyan Liu Ertao Hu Jianguang Xu Yi Tong |
| author_facet | Xiaojuan Lian Xinyi Shen Jinke Fu Zhixuan Gao Xiang Wan Xiaoyan Liu Ertao Hu Jianguang Xu Yi Tong |
| author_sort | Xiaojuan Lian |
| collection | DOAJ |
| description | Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO<sub>2</sub> structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO<sub>2</sub> and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO<sub>2</sub>/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO<sub>2</sub>/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO<sub>2</sub>/Pt RRAM devices have been discussed on the basis of our experimental results. |
| first_indexed | 2024-03-10T14:13:24Z |
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| id | doaj.art-21a69e4c728d4f13a59051e65e6bb6e6 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T14:13:24Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-21a69e4c728d4f13a59051e65e6bb6e62023-11-21T00:00:03ZengMDPI AGElectronics2079-92922020-12-01912209810.3390/electronics9122098Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM DevicesXiaojuan Lian0Xinyi Shen1Jinke Fu2Zhixuan Gao3Xiang Wan4Xiaoyan Liu5Ertao Hu6Jianguang Xu7Yi Tong8The Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaThe School of Materials Science and Engineering, Yancheng Institute of Technology, 211 East Jianjun Road, Yancheng 224051, ChinaThe Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaUtilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO<sub>2</sub> structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO<sub>2</sub> and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO<sub>2</sub>/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO<sub>2</sub>/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO<sub>2</sub>/Pt RRAM devices have been discussed on the basis of our experimental results.https://www.mdpi.com/2079-9292/9/12/2098RRAM devices2D MXeneresistance switchingvolatilenonvolatilesynaptic plasticity |
| spellingShingle | Xiaojuan Lian Xinyi Shen Jinke Fu Zhixuan Gao Xiang Wan Xiaoyan Liu Ertao Hu Jianguang Xu Yi Tong Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices Electronics RRAM devices 2D MXene resistance switching volatile nonvolatile synaptic plasticity |
| title | Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices |
| title_full | Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices |
| title_fullStr | Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices |
| title_full_unstemmed | Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices |
| title_short | Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO<sub>2</sub>/Pt RRAM Devices |
| title_sort | electrical properties and biological synaptic simulation of ag mxene sio sub 2 sub pt rram devices |
| topic | RRAM devices 2D MXene resistance switching volatile nonvolatile synaptic plasticity |
| url | https://www.mdpi.com/2079-9292/9/12/2098 |
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