Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate
Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-01-01
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| Series: | Crystals |
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| Online Access: | http://www.mdpi.com/2073-4352/9/1/32 |
| _version_ | 1818014252088164352 |
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| author | Hao Liu Jia-jun Li Zhen-rui Li Kai Xu Zheng-jia Chen Guang-chao Chen |
| author_facet | Hao Liu Jia-jun Li Zhen-rui Li Kai Xu Zheng-jia Chen Guang-chao Chen |
| author_sort | Hao Liu |
| collection | DOAJ |
| description | Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality. |
| first_indexed | 2024-04-14T06:42:39Z |
| format | Article |
| id | doaj.art-21a7bebc6e6b4e3b8e46907b7c209a60 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-14T06:42:39Z |
| publishDate | 2019-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-21a7bebc6e6b4e3b8e46907b7c209a602022-12-22T02:07:17ZengMDPI AGCrystals2073-43522019-01-01913210.3390/cryst9010032cryst9010032Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth RateHao Liu0Jia-jun Li1Zhen-rui Li2Kai Xu3Zheng-jia Chen4Guang-chao Chen5College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaSingle crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.http://www.mdpi.com/2073-4352/9/1/32dual radio frequencyinductive coupled plasma jetsingle crystal diamondchemical vapor deposition (CVD)methane fluxgrowth rate |
| spellingShingle | Hao Liu Jia-jun Li Zhen-rui Li Kai Xu Zheng-jia Chen Guang-chao Chen Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate Crystals dual radio frequency inductive coupled plasma jet single crystal diamond chemical vapor deposition (CVD) methane flux growth rate |
| title | Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate |
| title_full | Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate |
| title_fullStr | Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate |
| title_full_unstemmed | Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate |
| title_short | Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate |
| title_sort | single crystal diamond deposited by dual radio frequency plasma jet cvd with high growth rate |
| topic | dual radio frequency inductive coupled plasma jet single crystal diamond chemical vapor deposition (CVD) methane flux growth rate |
| url | http://www.mdpi.com/2073-4352/9/1/32 |
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