Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

<p>Abstract</p> <p>Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy disc...

Full description

Bibliographic Details
Main Authors: Li DB, Shi K, Song HP, Guo Y, Wang J, Xu XQ, Liu JM, Yang AL, Wei HY, Zhang B, Yang SY, Liu XL, Zhu QS, Wang ZG
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://www.nanoscalereslett.com/content/6/1/50
Description
Summary:<p>Abstract</p> <p>Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 &#177; 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 &#177; 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.</p>
ISSN:1931-7573
1556-276X