Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

<p>Abstract</p> <p>Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy disc...

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Main Authors: Li DB, Shi K, Song HP, Guo Y, Wang J, Xu XQ, Liu JM, Yang AL, Wei HY, Zhang B, Yang SY, Liu XL, Zhu QS, Wang ZG
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://www.nanoscalereslett.com/content/6/1/50
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author Li DB
Shi K
Song HP
Guo Y
Wang J
Xu XQ
Liu JM
Yang AL
Wei HY
Zhang B
Yang SY
Liu XL
Zhu QS
Wang ZG
author_facet Li DB
Shi K
Song HP
Guo Y
Wang J
Xu XQ
Liu JM
Yang AL
Wei HY
Zhang B
Yang SY
Liu XL
Zhu QS
Wang ZG
author_sort Li DB
collection DOAJ
description <p>Abstract</p> <p>Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 &#177; 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 &#177; 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.</p>
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spelling doaj.art-21d56ebcf44846c8b686067a06c8c93f2023-09-02T20:05:33ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-016150Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron SpectroscopyLi DBShi KSong HPGuo YWang JXu XQLiu JMYang ALWei HYZhang BYang SYLiu XLZhu QSWang ZG<p>Abstract</p> <p>Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 &#177; 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 &#177; 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.</p>http://www.nanoscalereslett.com/content/6/1/50Valence band offsetInN/diamond heterojunctionX-ray photoelectron spectroscopyConduction band offset
spellingShingle Li DB
Shi K
Song HP
Guo Y
Wang J
Xu XQ
Liu JM
Yang AL
Wei HY
Zhang B
Yang SY
Liu XL
Zhu QS
Wang ZG
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
Nanoscale Research Letters
Valence band offset
InN/diamond heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
title Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_full Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_fullStr Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_full_unstemmed Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_short Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
title_sort determination of inn diamond heterojunction band offset by x ray photoelectron spectroscopy
topic Valence band offset
InN/diamond heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
url http://www.nanoscalereslett.com/content/6/1/50
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