In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
Abstract Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stack...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2023-10-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-42028-5 |
| _version_ | 1797558705158356992 |
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| author | Jinshi Li Pingchuan Shen Zeyan Zhuang Junqi Wu Ben Zhong Tang Zujin Zhao |
| author_facet | Jinshi Li Pingchuan Shen Zeyan Zhuang Junqi Wu Ben Zhong Tang Zujin Zhao |
| author_sort | Jinshi Li |
| collection | DOAJ |
| description | Abstract Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator. |
| first_indexed | 2024-03-10T17:34:48Z |
| format | Article |
| id | doaj.art-21d5baca213f40549703a6ce496f8caa |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-10T17:34:48Z |
| publishDate | 2023-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-21d5baca213f40549703a6ce496f8caa2023-11-20T09:53:13ZengNature PortfolioNature Communications2041-17232023-10-0114111310.1038/s41467-023-42028-5In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elementsJinshi Li0Pingchuan Shen1Zeyan Zhuang2Junqi Wu3Ben Zhong Tang4Zujin Zhao5State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of TechnologyState Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of TechnologyState Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of TechnologyState Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of TechnologySchool of Science and Engineering, Shenzhen Institute of Aggregate Science and Technology, The Chinese University of Hong KongState Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of TechnologyAbstract Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking (f-Fu) and thiophene‒benzene stacking (f-Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f-Fu exhibits volatile turn-on feature while f-Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f-Fu possesses higher switching probability and faster responsive time, while f-Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f-Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator.https://doi.org/10.1038/s41467-023-42028-5 |
| spellingShingle | Jinshi Li Pingchuan Shen Zeyan Zhuang Junqi Wu Ben Zhong Tang Zujin Zhao In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements Nature Communications |
| title | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
| title_full | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
| title_fullStr | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
| title_full_unstemmed | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
| title_short | In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements |
| title_sort | in situ electro responsive through space coupling enabling foldamers as volatile memory elements |
| url | https://doi.org/10.1038/s41467-023-42028-5 |
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