Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal
The metal–insulator transition induced by the gate electric field in the charge order phase of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>α</mi></semantics></math></inline-formu...
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MDPI AG
2023-08-01
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| Series: | Solids |
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| Online Access: | https://www.mdpi.com/2673-6497/4/3/13 |
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| author | Ryosuke Ando Ryo Watanuki Kazuhiro Kudo Hyuma Masu Masatoshi Sakai |
| author_facet | Ryosuke Ando Ryo Watanuki Kazuhiro Kudo Hyuma Masu Masatoshi Sakai |
| author_sort | Ryosuke Ando |
| collection | DOAJ |
| description | The metal–insulator transition induced by the gate electric field in the charge order phase of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-(BEDT-TTF)<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>I<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> single-crystal field-effect transistor (FET) structure was clearly observed near the phase transition temperature. An abrupt increase in the electrical conductance induced by the applied gate electric field was evident, which corresponds to the partial dissolution of the charge order phase triggered by the gate electric field. The estimated nominal dissolved charge order region (i.e., the gate-induced metallic region) was overestimated in 130–150 K, suggesting additional effects such as Joule heating. On the other hand, in the lower temperature region below 120 K, the corresponding dissolved charge order was several monolayers of BEDT-TTF, suggesting that it is possible to dissolve the charge order phase within the bistable temperature region. |
| first_indexed | 2024-03-10T21:59:07Z |
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| id | doaj.art-21dbaf357fde4dbdae52084473f54a10 |
| institution | Directory Open Access Journal |
| issn | 2673-6497 |
| language | English |
| last_indexed | 2024-03-10T21:59:07Z |
| publishDate | 2023-08-01 |
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| record_format | Article |
| series | Solids |
| spelling | doaj.art-21dbaf357fde4dbdae52084473f54a102023-11-19T13:00:08ZengMDPI AGSolids2673-64972023-08-014320121210.3390/solids4030013Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single CrystalRyosuke Ando0Ryo Watanuki1Kazuhiro Kudo2Hyuma Masu3Masatoshi Sakai4Department of Electrical and Electronic Engineering, Chiba University, Chiba 263-8522, JapanDepartment of Electrical and Electronic Engineering, Chiba University, Chiba 263-8522, JapanDepartment of Electrical and Electronic Engineering, Chiba University, Chiba 263-8522, JapanCenter for Analytical Instrumentation, Chiba University, Chiba 263-8522, JapanDepartment of Electrical and Electronic Engineering, Chiba University, Chiba 263-8522, JapanThe metal–insulator transition induced by the gate electric field in the charge order phase of the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi>α</mi></semantics></math></inline-formula>-(BEDT-TTF)<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>I<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> single-crystal field-effect transistor (FET) structure was clearly observed near the phase transition temperature. An abrupt increase in the electrical conductance induced by the applied gate electric field was evident, which corresponds to the partial dissolution of the charge order phase triggered by the gate electric field. The estimated nominal dissolved charge order region (i.e., the gate-induced metallic region) was overestimated in 130–150 K, suggesting additional effects such as Joule heating. On the other hand, in the lower temperature region below 120 K, the corresponding dissolved charge order was several monolayers of BEDT-TTF, suggesting that it is possible to dissolve the charge order phase within the bistable temperature region.https://www.mdpi.com/2673-6497/4/3/13charge orderfield-effect transistorBEDT-TTFelectron correlationorganicphase transition transistor |
| spellingShingle | Ryosuke Ando Ryo Watanuki Kazuhiro Kudo Hyuma Masu Masatoshi Sakai Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal Solids charge order field-effect transistor BEDT-TTF electron correlation organic phase transition transistor |
| title | Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal |
| title_full | Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal |
| title_fullStr | Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal |
| title_full_unstemmed | Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal |
| title_short | Phase Transition Field Effect Transistor Observed in an <i>α</i>-(BEDT-TTF)<sub>2</sub>I<sub>3</sub> Single Crystal |
| title_sort | phase transition field effect transistor observed in an i α i bedt ttf sub 2 sub i sub 3 sub single crystal |
| topic | charge order field-effect transistor BEDT-TTF electron correlation organic phase transition transistor |
| url | https://www.mdpi.com/2673-6497/4/3/13 |
| work_keys_str_mv | AT ryosukeando phasetransitionfieldeffecttransistorobservedinaniaibedtttfsub2subisub3subsinglecrystal AT ryowatanuki phasetransitionfieldeffecttransistorobservedinaniaibedtttfsub2subisub3subsinglecrystal AT kazuhirokudo phasetransitionfieldeffecttransistorobservedinaniaibedtttfsub2subisub3subsinglecrystal AT hyumamasu phasetransitionfieldeffecttransistorobservedinaniaibedtttfsub2subisub3subsinglecrystal AT masatoshisakai phasetransitionfieldeffecttransistorobservedinaniaibedtttfsub2subisub3subsinglecrystal |