Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO<sub>2</sub>/TaOx/TaN Devices

Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO<sub>2</sub>/TaOx/TaN Devices

As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can detect harmful stimuli. Although a complex CMOS circuit is...

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Bibliographic Details
Main Authors: Minsu Park, Beomki Jeon, Jongmin Park, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
RRAM
nociceptor
threshold switching
high-k
Online Access:https://www.mdpi.com/2079-4991/12/23/4206

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