GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal structure of grown films was estimated by X-ray g...

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Bibliographic Details
Main Authors: Evgeniy Klimov, Aleksey Klochkov, Sergey Pushkarev, Galib Galiev, Rinat Galiev, Nataliya Yuzeeva, Aleksey Zaitsev, Yury Volkovsky, Alexey Seregin, Pavel Prosekov
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
Subjects:
GaAs
(110) oriented substrate
pole figures
reciprocal space mapping
amphoteric dopant
photoluminescence spectroscopy
Online Access:https://www.mdpi.com/2073-4352/13/1/28

Internet

https://www.mdpi.com/2073-4352/13/1/28

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