Gallium Nitride Power Devices: A State of the Art Review
Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium N...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10128694/ |
| _version_ | 1797820012470206464 |
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| author | Ander Udabe Igor Baraia-Etxaburu David Garrido Diez |
| author_facet | Ander Udabe Igor Baraia-Etxaburu David Garrido Diez |
| author_sort | Ander Udabe |
| collection | DOAJ |
| description | Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium Nitride (GaN) devices are several steps behind in terms of development, standardization and achievable power levels. This makes the use and integration of these devices in real power applications more challenging. Commercially available current Power GaN devices are based on lateral normally ON HEMT transistors. In order to get normally OFF power transistors, two transistor structures have been proposed: enhancement mode (e-mode) and hybrid transistors. Current E-mode transistors present a low gate threshold voltage which could lead to crosstalk problems. In contrast, hybrid transistors have higher gate threshold voltages, however, the use of a Silicon MOSFET in their structure limits their performance. The lack of a standard power GaN device makes it difficult the adoption of these promising devices by the industry. Thus, in order to facilitate the adoption of these power GaN devices, this paper presents a State of the Art of power Gallium Nitride devices focusing on their structures, basics and gate terminal requirements. |
| first_indexed | 2024-03-13T09:31:07Z |
| format | Article |
| id | doaj.art-22279d3d161947de9d1c31ecf1560e9d |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-13T09:31:07Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-22279d3d161947de9d1c31ecf1560e9d2023-05-25T23:00:46ZengIEEEIEEE Access2169-35362023-01-0111486284865010.1109/ACCESS.2023.327720010128694Gallium Nitride Power Devices: A State of the Art ReviewAnder Udabe0https://orcid.org/0000-0003-0186-9800Igor Baraia-Etxaburu1https://orcid.org/0000-0003-4161-7368David Garrido Diez2https://orcid.org/0000-0003-1668-8981Electronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, SpainElectronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, SpainElectronics and Computer Science Department, University of Mondragon, Mondragon, Arrasate, SpainWide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium Nitride (GaN) devices are several steps behind in terms of development, standardization and achievable power levels. This makes the use and integration of these devices in real power applications more challenging. Commercially available current Power GaN devices are based on lateral normally ON HEMT transistors. In order to get normally OFF power transistors, two transistor structures have been proposed: enhancement mode (e-mode) and hybrid transistors. Current E-mode transistors present a low gate threshold voltage which could lead to crosstalk problems. In contrast, hybrid transistors have higher gate threshold voltages, however, the use of a Silicon MOSFET in their structure limits their performance. The lack of a standard power GaN device makes it difficult the adoption of these promising devices by the industry. Thus, in order to facilitate the adoption of these power GaN devices, this paper presents a State of the Art of power Gallium Nitride devices focusing on their structures, basics and gate terminal requirements.https://ieeexplore.ieee.org/document/10128694/GaN devicesreviewwide bandgap semiconductor |
| spellingShingle | Ander Udabe Igor Baraia-Etxaburu David Garrido Diez Gallium Nitride Power Devices: A State of the Art Review IEEE Access GaN devices review wide bandgap semiconductor |
| title | Gallium Nitride Power Devices: A State of the Art Review |
| title_full | Gallium Nitride Power Devices: A State of the Art Review |
| title_fullStr | Gallium Nitride Power Devices: A State of the Art Review |
| title_full_unstemmed | Gallium Nitride Power Devices: A State of the Art Review |
| title_short | Gallium Nitride Power Devices: A State of the Art Review |
| title_sort | gallium nitride power devices a state of the art review |
| topic | GaN devices review wide bandgap semiconductor |
| url | https://ieeexplore.ieee.org/document/10128694/ |
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