Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
Implantation of defects is an attractive trend for the modification of important properties of thin films for practical applications. In the present attempt, an effective approach for tuning the native defects in thin films is reported. The films were sequentially irradiated at five different fluenc...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-12-01
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| Series: | Materials Letters: X |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590150821000545 |
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| author | Jyoti Yadav Rini Singh M.D. Anoop Nisha Yadav N. Srinivasa Rao Fouran Singh Kamlendra Awasthi Manoj Kumar |
| author_facet | Jyoti Yadav Rini Singh M.D. Anoop Nisha Yadav N. Srinivasa Rao Fouran Singh Kamlendra Awasthi Manoj Kumar |
| author_sort | Jyoti Yadav |
| collection | DOAJ |
| description | Implantation of defects is an attractive trend for the modification of important properties of thin films for practical applications. In the present attempt, an effective approach for tuning the native defects in thin films is reported. The films were sequentially irradiated at five different fluences (5 × 1011, 1 × 1012, 3 × 1012, 5 × 1012, and 1 × 1013 ions/cm2). The key role of high-energy Ni ion irradiation-induced native defects was observed by the modifications in the physical properties of samples. However, irradiation induces a structural phase transition through strain. The average crystallite size as determined from X-ray diffraction (XRD) peak broadening was found to be 19.3 ± 5 (nm). A monotonic increase in the lattice strain was observed up to a fluence of 5 × 1012 ions/cm2. The resistivity v/s temperature measurements revealed an increase in resistivity up to the fluence 3 × 1012 ions/cm2 indicating an increase in grain boundaries effect. Our findings provide an insight into the correlation of tuned properties with the defects induced by irradiation and also a route to have the defects in a precise and controlled way. |
| first_indexed | 2024-12-13T14:53:32Z |
| format | Article |
| id | doaj.art-224cbe9d39ed455cb1efafbd1f18f221 |
| institution | Directory Open Access Journal |
| issn | 2590-1508 |
| language | English |
| last_indexed | 2024-12-13T14:53:32Z |
| publishDate | 2021-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials Letters: X |
| spelling | doaj.art-224cbe9d39ed455cb1efafbd1f18f2212022-12-21T23:41:17ZengElsevierMaterials Letters: X2590-15082021-12-0112100113Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiationJyoti Yadav0Rini Singh1M.D. Anoop2Nisha Yadav3N. Srinivasa Rao4Fouran Singh5Kamlendra Awasthi6Manoj Kumar7Department of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India; Corresponding authors at: Department of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India.Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, JapanDepartment of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, IndiaDepartment of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, IndiaDepartment of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, IndiaInter-University Accelerator Centre (IUAC), New Delhi 110067, IndiaDepartment of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, IndiaDepartment of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India; Corresponding authors at: Department of Physics, Malaviya National Institute of Technology Jaipur, Rajasthan 302017, India.Implantation of defects is an attractive trend for the modification of important properties of thin films for practical applications. In the present attempt, an effective approach for tuning the native defects in thin films is reported. The films were sequentially irradiated at five different fluences (5 × 1011, 1 × 1012, 3 × 1012, 5 × 1012, and 1 × 1013 ions/cm2). The key role of high-energy Ni ion irradiation-induced native defects was observed by the modifications in the physical properties of samples. However, irradiation induces a structural phase transition through strain. The average crystallite size as determined from X-ray diffraction (XRD) peak broadening was found to be 19.3 ± 5 (nm). A monotonic increase in the lattice strain was observed up to a fluence of 5 × 1012 ions/cm2. The resistivity v/s temperature measurements revealed an increase in resistivity up to the fluence 3 × 1012 ions/cm2 indicating an increase in grain boundaries effect. Our findings provide an insight into the correlation of tuned properties with the defects induced by irradiation and also a route to have the defects in a precise and controlled way.http://www.sciencedirect.com/science/article/pii/S2590150821000545Thin filmsDefectsSemiconductors |
| spellingShingle | Jyoti Yadav Rini Singh M.D. Anoop Nisha Yadav N. Srinivasa Rao Fouran Singh Kamlendra Awasthi Manoj Kumar Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation Materials Letters: X Thin films Defects Semiconductors |
| title | Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation |
| title_full | Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation |
| title_fullStr | Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation |
| title_full_unstemmed | Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation |
| title_short | Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation |
| title_sort | impact of defects on the structural and electrical transport properties of sb2te3 thin films by shi irradiation |
| topic | Thin films Defects Semiconductors |
| url | http://www.sciencedirect.com/science/article/pii/S2590150821000545 |
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