Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study
β-Ga<sub>2</sub>O<sub>3</sub> suffers from extremely poor thermal conductivity, resulting in a severe self-heating effect. Integrating β-Ga<sub>2</sub>O<sub>3</sub> with high-thermal-conductivity foreign substrates is one of the promising solutions to...
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MDPI AG
2022-07-01
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| Online Access: | https://www.mdpi.com/2079-9292/11/15/2323 |
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| author | Chaochao Liu Hao He Xinlong Zhou Wenjun Liu |
| author_facet | Chaochao Liu Hao He Xinlong Zhou Wenjun Liu |
| author_sort | Chaochao Liu |
| collection | DOAJ |
| description | β-Ga<sub>2</sub>O<sub>3</sub> suffers from extremely poor thermal conductivity, resulting in a severe self-heating effect. Integrating β-Ga<sub>2</sub>O<sub>3</sub> with high-thermal-conductivity foreign substrates is one of the promising solutions to improve the thermal performance of β-Ga<sub>2</sub>O<sub>3</sub> devices. However, the gate insulator also plays an important role in the device’s thermal characteristics. In this work, we analyze the influence of the thermal conductivity of the substrate and gate insulator and the associated thermal boundary conductance (TBC) on the channel peak temperature (T<sub>MAX</sub>) investigated by the coupled 3-D thermal simulation. It reveals that AlN and SiC substrate could be sufficient compared to the expensive diamond substrate for substrate integration thermal management scheme. And the reduced T<sub>MAX</sub> becomes more prominent with the high thermal conductivity gate insulator (e.g., <i>h</i>-BN) than with the conventional Al<sub>2</sub>O<sub>3</sub> gate insulator. Furthermore, the T<sub>MAX</sub> of the device maintains a very high temperature as the TBC is very low (10 MWm<sup>−2</sup>K<sup>−1</sup>), indicating the importance of optimizing TBC. Our results provide useful insights into the thermal management of β-Ga<sub>2</sub>O<sub>3</sub> devices. |
| first_indexed | 2024-03-09T12:41:35Z |
| format | Article |
| id | doaj.art-225d80498e9b49268cfd77a6984b3a29 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T12:41:35Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-225d80498e9b49268cfd77a6984b3a292023-11-30T22:17:03ZengMDPI AGElectronics2079-92922022-07-011115232310.3390/electronics11152323Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation StudyChaochao Liu0Hao He1Xinlong Zhou2Wenjun Liu3State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, Chinaβ-Ga<sub>2</sub>O<sub>3</sub> suffers from extremely poor thermal conductivity, resulting in a severe self-heating effect. Integrating β-Ga<sub>2</sub>O<sub>3</sub> with high-thermal-conductivity foreign substrates is one of the promising solutions to improve the thermal performance of β-Ga<sub>2</sub>O<sub>3</sub> devices. However, the gate insulator also plays an important role in the device’s thermal characteristics. In this work, we analyze the influence of the thermal conductivity of the substrate and gate insulator and the associated thermal boundary conductance (TBC) on the channel peak temperature (T<sub>MAX</sub>) investigated by the coupled 3-D thermal simulation. It reveals that AlN and SiC substrate could be sufficient compared to the expensive diamond substrate for substrate integration thermal management scheme. And the reduced T<sub>MAX</sub> becomes more prominent with the high thermal conductivity gate insulator (e.g., <i>h</i>-BN) than with the conventional Al<sub>2</sub>O<sub>3</sub> gate insulator. Furthermore, the T<sub>MAX</sub> of the device maintains a very high temperature as the TBC is very low (10 MWm<sup>−2</sup>K<sup>−1</sup>), indicating the importance of optimizing TBC. Our results provide useful insights into the thermal management of β-Ga<sub>2</sub>O<sub>3</sub> devices.https://www.mdpi.com/2079-9292/11/15/2323β-Ga<sub>2</sub>O<sub>3</sub>thermal managementdevice simulation |
| spellingShingle | Chaochao Liu Hao He Xinlong Zhou Wenjun Liu Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study Electronics β-Ga<sub>2</sub>O<sub>3</sub> thermal management device simulation |
| title | Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study |
| title_full | Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study |
| title_fullStr | Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study |
| title_full_unstemmed | Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study |
| title_short | Influence of Substrate and Gate Insulator on the Thermal Characteristics of β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors: A Simulation Study |
| title_sort | influence of substrate and gate insulator on the thermal characteristics of β ga sub 2 sub o sub 3 sub field effect transistors a simulation study |
| topic | β-Ga<sub>2</sub>O<sub>3</sub> thermal management device simulation |
| url | https://www.mdpi.com/2079-9292/11/15/2323 |
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