Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells
In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWH...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-07-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4815971 |
| _version_ | 1818864204812124160 |
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| author | Qi Wang Zhigang Jia Xiaomin Ren Yingce Yan Zhiqiang Bian Xia Zhang Shiwei Cai Yongqing Huang |
| author_facet | Qi Wang Zhigang Jia Xiaomin Ren Yingce Yan Zhiqiang Bian Xia Zhang Shiwei Cai Yongqing Huang |
| author_sort | Qi Wang |
| collection | DOAJ |
| description | In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM) of only 29.5 meV. In addition, a slight blue-shift (∼18 meV) of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation (<2%) was mainly dominated by a negative effect even though it can effectively reduce the compressive strain, i.e., it degraded the structural properties and PL efficiency of MQWs containing relatively less indium. Only at the lowest temperature growth (i.e., indium content x > 40%), the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties. |
| first_indexed | 2024-12-19T10:27:57Z |
| format | Article |
| id | doaj.art-22688d9c98b9470fbc37252d149e1621 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T10:27:57Z |
| publishDate | 2013-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-22688d9c98b9470fbc37252d149e16212022-12-21T20:25:49ZengAIP Publishing LLCAIP Advances2158-32262013-07-013707211107211110.1063/1.4815971Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wellsQi WangZhigang JiaXiaomin RenYingce YanZhiqiang BianXia ZhangShiwei CaiYongqing HuangIn this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM) of only 29.5 meV. In addition, a slight blue-shift (∼18 meV) of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation (<2%) was mainly dominated by a negative effect even though it can effectively reduce the compressive strain, i.e., it degraded the structural properties and PL efficiency of MQWs containing relatively less indium. Only at the lowest temperature growth (i.e., indium content x > 40%), the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.http://link.aip.org/link/doi/10.1063/1.4815971 |
| spellingShingle | Qi Wang Zhigang Jia Xiaomin Ren Yingce Yan Zhiqiang Bian Xia Zhang Shiwei Cai Yongqing Huang Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells AIP Advances |
| title | Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells |
| title_full | Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells |
| title_fullStr | Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells |
| title_full_unstemmed | Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells |
| title_short | Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells |
| title_sort | effect of boron incorporation on the structural and photoluminescence properties of highly strained inxga1 xas gaas multiple quantum wells |
| url | http://link.aip.org/link/doi/10.1063/1.4815971 |
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