Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...

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Detalhes bibliográficos
Principais autores: James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller
Formato: Artigo
Idioma:English
Publicado em: AIP Publishing LLC 2016-04-01
coleção:AIP Advances
Acesso em linha:http://dx.doi.org/10.1063/1.4948446

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