Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...
Príomhchruthaitheoirí: | James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller |
---|---|
Formáid: | Alt |
Teanga: | English |
Foilsithe / Cruthaithe: |
AIP Publishing LLC
2016-04-01
|
Sraith: | AIP Advances |
Rochtain ar líne: | http://dx.doi.org/10.1063/1.4948446 |
Míreanna comhchosúla
Míreanna comhchosúla
-
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
de réir: Liwen Cheng, et al.
Foilsithe / Cruthaithe: (2021-08-01) -
Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
de réir: Bryan Melanson, et al.
Foilsithe / Cruthaithe: (2021-01-01) -
Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
de réir: Hideyuki Itakura, et al.
Foilsithe / Cruthaithe: (2020-02-01) -
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
de réir: Zhang, Xueliang, et al.
Foilsithe / Cruthaithe: (2014) -
Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer
de réir: Hartono, Haryono, et al.
Foilsithe / Cruthaithe: (2005)