Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...
मुख्य लेखकों: | James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller |
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स्वरूप: | लेख |
भाषा: | English |
प्रकाशित: |
AIP Publishing LLC
2016-04-01
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श्रृंखला: | AIP Advances |
ऑनलाइन पहुंच: | http://dx.doi.org/10.1063/1.4948446 |
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