Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...
Main Authors: | James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller |
---|---|
Formato: | Artigo |
Idioma: | English |
Publicado em: |
AIP Publishing LLC
2016-04-01
|
Colecção: | AIP Advances |
Acesso em linha: | http://dx.doi.org/10.1063/1.4948446 |
Registos relacionados
-
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
Por: Liwen Cheng, et al.
Publicado em: (2021-08-01) -
Electrocatalytic activity of InN/InGaN quantum dots
Por: Hongjie Yin, et al.
Publicado em: (2019-09-01) -
Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
Por: Bryan Melanson, et al.
Publicado em: (2021-01-01) -
Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
Por: Hideyuki Itakura, et al.
Publicado em: (2020-02-01) -
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Por: Zhang, Xueliang, et al.
Publicado em: (2014)