Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...

Bibliográfalaš dieđut
Váldodahkkit:	James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller
Materiálatiipa:	Artihkal
Giella:	English
Almmustuhtton:	AIP Publishing LLC 2016-04-01
Ráidu:	AIP Advances
Liŋkkat:	http://dx.doi.org/10.1063/1.4948446

Geahča maid

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
Dahkki: Liwen Cheng, et al.
Almmustuhtton: (2021-08-01)

Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
Dahkki: Bryan Melanson, et al.
Almmustuhtton: (2021-01-01)

Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
Dahkki: Hideyuki Itakura, et al.
Almmustuhtton: (2020-02-01)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Dahkki: Zhang, Xueliang, et al.
Almmustuhtton: (2014)

Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer
Dahkki: Hartono, Haryono, et al.
Almmustuhtton: (2005)

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis
Dahkki: Saima Zaman, et al.
Almmustuhtton: (2013-10-01)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
Dahkki: Chua, Soo-Jin, et al.
Almmustuhtton: (2003)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
Dahkki: Song, T.L., et al.
Almmustuhtton: (2003)

Bayesian Optimization of Hubbard U’s for Investigating InGaN Superlattices
Dahkki: Maxim N. Popov, et al.
Almmustuhtton: (2021-08-01)

Strain-Induced Band Gap Variation in InGaN/GaN Short Period Superlattices
Dahkki: Polyxeni Chatzopoulou, et al.
Almmustuhtton: (2023-04-01)

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed
Dahkki: Jixing Chai, et al.
Almmustuhtton: (2023-03-01)

Growth modes in heteroepitaxy of InGaN on GaN
Dahkki: Oliver, R, et al.
Almmustuhtton: (2005)

Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices
Dahkki: Giovanni Giannoccaro, et al.
Almmustuhtton: (2016-01-01)

Luminescence properties of isolated InGaN/GaN quantum dots
Dahkki: Martin, R, et al.
Almmustuhtton: (2005)

Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
Dahkki: Konrad Maier, et al.
Almmustuhtton: (2019-06-01)

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy
Dahkki: K. Khan, et al.
Almmustuhtton: (2021-12-01)

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
Dahkki: Palacios, Tomas, et al.
Almmustuhtton: (2012)

Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer
Dahkki: Rongli Deng, et al.
Almmustuhtton: (2024-08-01)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
Dahkki: Oliver, R, et al.
Almmustuhtton: (2004)

Carrier localization mechanisms in InGaN/GaN quantum wells
Dahkki: Watson-Parris, D, et al.
Almmustuhtton: (2011)

Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
Dahkki: Ming-Hsien Wu, et al.
Almmustuhtton: (2012-01-01)

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
Dahkki: Zhang, Zi-Hui, et al.
Almmustuhtton: (2015)

Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
Dahkki: Amélie Dussaigne, et al.
Almmustuhtton: (2024-12-01)

Impact of barrier width on topological insulator phase in InN/InGaN quantum wells with moderate strain
Dahkki: S. P. Łepkowski
Almmustuhtton: (2025-02-01)

Two-photon absorption from single InGaN/GaN quantum dots
Dahkki: Jarjour, A, et al.
Almmustuhtton: (2006)

A hole accelerator for InGaN/GaN light-emitting diodes
Dahkki: Zhang, Zi-Hui, et al.
Almmustuhtton: (2014)

Electrically driven single InGaN/GaN quantum dot emission
Dahkki: Jarjour, A, et al.
Almmustuhtton: (2008)

Progress in the optical studies of single InGaN/GaN quantum dots
Dahkki: Jarjour, A, et al.
Almmustuhtton: (2007)

A hole modulator for InGaN/GaN light-emitting diodes
Dahkki: Zhang, Zi-Hui, et al.
Almmustuhtton: (2015)

Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum
Dahkki: Marta Gładysiewicz-Kudrawiec, et al.
Almmustuhtton: (2025-01-01)

Effect of Scattering Angle in Electron Transport of AlGaN and InGaN
Dahkki: T. Vijetha, et al.
Almmustuhtton: (2022-01-01)

Gain characteristics of InGaN quantum wells with AlGaInN barriers
Dahkki: Hanlin Fu, et al.
Almmustuhtton: (2019-04-01)

Dynamics of single InGaN quantum dots
Dahkki: Taylor, R, et al.
Almmustuhtton: (2004)

Electromagnetic Nanocoils Based on InGaN Nanorings
Dahkki: Ziwen Yan, et al.
Almmustuhtton: (2025-02-01)

InGaN quantum dots for micro-LEDs
Dahkki: Lai Wang, et al.
Almmustuhtton: (2024-10-01)

Two-photon absorption in single site-controlled InGaN/GaN quantum dots
Dahkki: Jarjour, A, et al.
Almmustuhtton: (2005)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
Dahkki: Haruka Matsuura, et al.
Almmustuhtton: (2019-04-01)

Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells
Dahkki: Sławomir P. Łepkowski
Almmustuhtton: (2023-07-01)

Performance Improvement of InGaN-Based Red Light-Emitting Diodes via Ultrathin InN Insertion Layer
Dahkki: Qianxi Zhou, et al.
Almmustuhtton: (2023-06-01)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
Dahkki: Jarjour, A, et al.
Almmustuhtton: (2007)