Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...
| Egile Nagusiak: | , , , , , , , , |
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| Formatua: | Artikulua |
| Hizkuntza: | English |
| Argitaratua: |
AIP Publishing LLC
2016-04-01
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| Saila: | AIP Advances |
| Sarrera elektronikoa: | http://dx.doi.org/10.1063/1.4948446 |