Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: James (Zi-Jian) Ju, Bo Sun, Georg Haunschild, Bernhard Loitsch, Benedikt Stoib, Martin S. Brandt, Martin Stutzmann, Yee Kan Koh, Gregor Koblmüller
Aineistotyyppi: Artikkeli
Kieli:English
Julkaistu: AIP Publishing LLC 2016-04-01
Sarja:AIP Advances
Linkit:http://dx.doi.org/10.1063/1.4948446

Internet

http://dx.doi.org/10.1063/1.4948446

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