Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...
| Autori principali: | , , , , , , , , |
|---|---|
| Natura: | Articolo |
| Lingua: | English |
| Pubblicazione: |
AIP Publishing LLC
2016-04-01
|
| Serie: | AIP Advances |
| Accesso online: | http://dx.doi.org/10.1063/1.4948446 |