Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL) grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x...
| Главные авторы: | , , , , , , , , |
|---|---|
| Формат: | Статья |
| Язык: | English |
| Опубликовано: |
AIP Publishing LLC
2016-04-01
|
| Серии: | AIP Advances |
| Online-ссылка: | http://dx.doi.org/10.1063/1.4948446 |