N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization
The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth param...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-04-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/4/699 |