Hybrid CMP Slurry Supply System Using Ionization and Atomization
Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials. However, excessive use of slurry affects the environment a...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-03-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/11/5/2217 |
| _version_ | 1797415456296927232 |
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| author | Hoseong Jo Da Sol Lee Seon Ho Jeong Hyun Seop Lee Hae Do Jeong |
| author_facet | Hoseong Jo Da Sol Lee Seon Ho Jeong Hyun Seop Lee Hae Do Jeong |
| author_sort | Hoseong Jo |
| collection | DOAJ |
| description | Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials. However, excessive use of slurry affects the environment and is expensive. Therefore, we propose a hybrid slurry supply system that combines ionization and atomization to reduce slurry consumption and improve the polishing quality. The proposed hybrid system atomizes the ionized slurry using electrolysis and a spray slurry nozzle. We compared the material removal rate (MRR) and polishing uniformity based on the slurry supply systems used in Cu and SiO<sub>2</sub> non-patterned wafers. Additionally, the step height reduction and dishing were compared in the Cu-patterned wafers. The experimental analysis using the hybrid system confirmed a 23% and 25% improvement in the MRR and uniformity, respectively, in comparison with the conventional slurry supply system. This improvement can be attributed to the chemical activation and uniform supply of the ionized and atomized slurries, respectively. Moreover, a significant reduction was observed in dishing and pitch-size dependence. Furthermore, the proposed system prevents heat accumulation between the CMP processes, serving as a cooling system. |
| first_indexed | 2024-03-09T05:48:51Z |
| format | Article |
| id | doaj.art-2281c3b44abf4b499c4bada7972ec755 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T05:48:51Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-2281c3b44abf4b499c4bada7972ec7552023-12-03T12:18:29ZengMDPI AGApplied Sciences2076-34172021-03-01115221710.3390/app11052217Hybrid CMP Slurry Supply System Using Ionization and AtomizationHoseong Jo0Da Sol Lee1Seon Ho Jeong2Hyun Seop Lee3Hae Do Jeong4School of Mechanical Engineering, Pusan National University, Geumjeong-gu, Busan 46241, KoreaSamsung Electro-Mechanics, Gangseo-gu, Busan 46754, KoreaSchool of Mechanical Engineering, Pusan National University, Geumjeong-gu, Busan 46241, KoreaDepartment of Mechanical Engineering, Dong-A University, Saha-gu, Busan 49315, KoreaSchool of Mechanical Engineering, Pusan National University, Geumjeong-gu, Busan 46241, KoreaChemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials. However, excessive use of slurry affects the environment and is expensive. Therefore, we propose a hybrid slurry supply system that combines ionization and atomization to reduce slurry consumption and improve the polishing quality. The proposed hybrid system atomizes the ionized slurry using electrolysis and a spray slurry nozzle. We compared the material removal rate (MRR) and polishing uniformity based on the slurry supply systems used in Cu and SiO<sub>2</sub> non-patterned wafers. Additionally, the step height reduction and dishing were compared in the Cu-patterned wafers. The experimental analysis using the hybrid system confirmed a 23% and 25% improvement in the MRR and uniformity, respectively, in comparison with the conventional slurry supply system. This improvement can be attributed to the chemical activation and uniform supply of the ionized and atomized slurries, respectively. Moreover, a significant reduction was observed in dishing and pitch-size dependence. Furthermore, the proposed system prevents heat accumulation between the CMP processes, serving as a cooling system.https://www.mdpi.com/2076-3417/11/5/2217CMPchemical mechanical planarizationhybridslurry supply systemionizationatomization |
| spellingShingle | Hoseong Jo Da Sol Lee Seon Ho Jeong Hyun Seop Lee Hae Do Jeong Hybrid CMP Slurry Supply System Using Ionization and Atomization Applied Sciences CMP chemical mechanical planarization hybrid slurry supply system ionization atomization |
| title | Hybrid CMP Slurry Supply System Using Ionization and Atomization |
| title_full | Hybrid CMP Slurry Supply System Using Ionization and Atomization |
| title_fullStr | Hybrid CMP Slurry Supply System Using Ionization and Atomization |
| title_full_unstemmed | Hybrid CMP Slurry Supply System Using Ionization and Atomization |
| title_short | Hybrid CMP Slurry Supply System Using Ionization and Atomization |
| title_sort | hybrid cmp slurry supply system using ionization and atomization |
| topic | CMP chemical mechanical planarization hybrid slurry supply system ionization atomization |
| url | https://www.mdpi.com/2076-3417/11/5/2217 |
| work_keys_str_mv | AT hoseongjo hybridcmpslurrysupplysystemusingionizationandatomization AT dasollee hybridcmpslurrysupplysystemusingionizationandatomization AT seonhojeong hybridcmpslurrysupplysystemusingionizationandatomization AT hyunseoplee hybridcmpslurrysupplysystemusingionizationandatomization AT haedojeong hybridcmpslurrysupplysystemusingionizationandatomization |