A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS<sub>2</sub>. We apply three different deformation modes within &#8722;10% to 30% range of two uniaxial (...

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Main Authors: Mahdi Faghihnasiri, Aidin Ahmadi, Samaneh Alvankar Golpayegan, Saeideh Garosi Sharifabadi, Ali Ramazani
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/10/3/446
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author Mahdi Faghihnasiri
Aidin Ahmadi
Samaneh Alvankar Golpayegan
Saeideh Garosi Sharifabadi
Ali Ramazani
author_facet Mahdi Faghihnasiri
Aidin Ahmadi
Samaneh Alvankar Golpayegan
Saeideh Garosi Sharifabadi
Ali Ramazani
author_sort Mahdi Faghihnasiri
collection DOAJ
description We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS<sub>2</sub>. We apply three different deformation modes within &#8722;10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along <i>x</i>, <i>y</i>, and <i>x</i>-<i>y</i> directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS<sub>2</sub> monolayers are investigated. Our findings reveal that the unstrained HfS<sub>2</sub> monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS<sub>2</sub> with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS<sub>2</sub> monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.
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spelling doaj.art-22a070b3729e42ccb51fc8429659e51c2022-12-21T17:32:33ZengMDPI AGNanomaterials2079-49912020-03-0110344610.3390/nano10030446nano10030446A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>Mahdi Faghihnasiri0Aidin Ahmadi1Samaneh Alvankar Golpayegan2Saeideh Garosi Sharifabadi3Ali Ramazani4Computational Materials Science Laboratory, Nano Research and Training Center, Tehran 19967-15433, IranComputational Materials Science Laboratory, Nano Research and Training Center, Tehran 19967-15433, IranDepartment of Physics, K.N. Toosi University of Technology, Tehran 19967-15433, IranDepartment of Physics, K.N. Toosi University of Technology, Tehran 19967-15433, IranDepartment of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139, USAWe utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS<sub>2</sub>. We apply three different deformation modes within &#8722;10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along <i>x</i>, <i>y</i>, and <i>x</i>-<i>y</i> directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS<sub>2</sub> monolayers are investigated. Our findings reveal that the unstrained HfS<sub>2</sub> monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS<sub>2</sub> with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS<sub>2</sub> monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.https://www.mdpi.com/2079-4991/10/3/446hfs2density functional theorymechanical propertiesbandgapelastic constants
spellingShingle Mahdi Faghihnasiri
Aidin Ahmadi
Samaneh Alvankar Golpayegan
Saeideh Garosi Sharifabadi
Ali Ramazani
A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>
Nanomaterials
hfs2
density functional theory
mechanical properties
bandgap
elastic constants
title A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>
title_full A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>
title_fullStr A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>
title_full_unstemmed A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>
title_short A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS<sub>2</sub>
title_sort first principles study of nonlinear elastic behavior and anisotropic electronic properties of two dimensional hfs sub 2 sub
topic hfs2
density functional theory
mechanical properties
bandgap
elastic constants
url https://www.mdpi.com/2079-4991/10/3/446
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