| Summary: | Ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub>-based optoelectronic devices have attracted considerable attention owing to their special significance in military and commercial applications. Using RF magnetron sputtering and post-annealing, monoclinic Ga<sub>2</sub>O<sub>3</sub> films of various thicknesses were created on a c-plane sapphire substrate (0001). The structural and optical properties of β-Ga<sub>2</sub>O<sub>3</sub> films were then investigated. The results show that all β-Ga<sub>2</sub>O<sub>3</sub> films have a single preferred orientation (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2</mn><mo stretchy="false">(</mo><mo>_</mo><mo stretchy="false">)</mo></mrow></semantics></math></inline-formula>01) and an average transmittance of more than 96% in the visible wavelength range (380–780 nm). Among them, the sample with a 90-minute sputtering time has the best crystal quality. This sample was subsequently used to construct a metal-semiconductor-metal (MSM), solar-blind, ultraviolet photodetector. The resulting photodetector not only exhibits excellent stability and sunblind characteristics but also has an ultra-high responsivity (46.3 A/W) and superb detectivity (1.83 × 10<sup>13</sup> Jones). Finally, the application potential of the device in solar-blind ultraviolet imaging was verified.
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