A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging
Ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub>-based optoelectronic devices have attracted considerable attention owing to their special significance in military and commercial applications. Using RF magnetron sputtering and post-annealing, monoclinic Ga<sub>2</sub&g...
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MDPI AG
2023-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/10/1434 |
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| author | Miao He Qing Zeng Lijuan Ye |
| author_facet | Miao He Qing Zeng Lijuan Ye |
| author_sort | Miao He |
| collection | DOAJ |
| description | Ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub>-based optoelectronic devices have attracted considerable attention owing to their special significance in military and commercial applications. Using RF magnetron sputtering and post-annealing, monoclinic Ga<sub>2</sub>O<sub>3</sub> films of various thicknesses were created on a c-plane sapphire substrate (0001). The structural and optical properties of β-Ga<sub>2</sub>O<sub>3</sub> films were then investigated. The results show that all β-Ga<sub>2</sub>O<sub>3</sub> films have a single preferred orientation (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2</mn><mo stretchy="false">(</mo><mo>_</mo><mo stretchy="false">)</mo></mrow></semantics></math></inline-formula>01) and an average transmittance of more than 96% in the visible wavelength range (380–780 nm). Among them, the sample with a 90-minute sputtering time has the best crystal quality. This sample was subsequently used to construct a metal-semiconductor-metal (MSM), solar-blind, ultraviolet photodetector. The resulting photodetector not only exhibits excellent stability and sunblind characteristics but also has an ultra-high responsivity (46.3 A/W) and superb detectivity (1.83 × 10<sup>13</sup> Jones). Finally, the application potential of the device in solar-blind ultraviolet imaging was verified. |
| first_indexed | 2024-03-10T21:19:19Z |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T21:19:19Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
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| series | Crystals |
| spelling | doaj.art-22b7d2741da74ee9b1f52a559db1d6cd2023-11-19T16:09:10ZengMDPI AGCrystals2073-43522023-09-011310143410.3390/cryst13101434A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind ImagingMiao He0Qing Zeng1Lijuan Ye2School of Mechanical and Vehicle Engineering, Nanchang Institute of Science & Technology, Nanchang 330108, ChinaSchool of Mechanical and Vehicle Engineering, Nanchang Institute of Science & Technology, Nanchang 330108, ChinaChongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, ChinaUltra-wide bandgap Ga<sub>2</sub>O<sub>3</sub>-based optoelectronic devices have attracted considerable attention owing to their special significance in military and commercial applications. Using RF magnetron sputtering and post-annealing, monoclinic Ga<sub>2</sub>O<sub>3</sub> films of various thicknesses were created on a c-plane sapphire substrate (0001). The structural and optical properties of β-Ga<sub>2</sub>O<sub>3</sub> films were then investigated. The results show that all β-Ga<sub>2</sub>O<sub>3</sub> films have a single preferred orientation (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2</mn><mo stretchy="false">(</mo><mo>_</mo><mo stretchy="false">)</mo></mrow></semantics></math></inline-formula>01) and an average transmittance of more than 96% in the visible wavelength range (380–780 nm). Among them, the sample with a 90-minute sputtering time has the best crystal quality. This sample was subsequently used to construct a metal-semiconductor-metal (MSM), solar-blind, ultraviolet photodetector. The resulting photodetector not only exhibits excellent stability and sunblind characteristics but also has an ultra-high responsivity (46.3 A/W) and superb detectivity (1.83 × 10<sup>13</sup> Jones). Finally, the application potential of the device in solar-blind ultraviolet imaging was verified.https://www.mdpi.com/2073-4352/13/10/1434β-Ga<sub>2</sub>O<sub>3</sub> thin filmssolar-blind ultraviolet photodetectorsultra-high responsivityimaging |
| spellingShingle | Miao He Qing Zeng Lijuan Ye A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging Crystals β-Ga<sub>2</sub>O<sub>3</sub> thin films solar-blind ultraviolet photodetectors ultra-high responsivity imaging |
| title | A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging |
| title_full | A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging |
| title_fullStr | A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging |
| title_full_unstemmed | A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging |
| title_short | A Highly Transparent β-Ga<sub>2</sub>O<sub>3</sub> Thin Film-Based Photodetector for Solar-Blind Imaging |
| title_sort | highly transparent β ga sub 2 sub o sub 3 sub thin film based photodetector for solar blind imaging |
| topic | β-Ga<sub>2</sub>O<sub>3</sub> thin films solar-blind ultraviolet photodetectors ultra-high responsivity imaging |
| url | https://www.mdpi.com/2073-4352/13/10/1434 |
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