Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer

This study describes how a polymer/ZnS composite layer with antireflection, scattering, and downshifting properties improved the short wavelength response of multi-crystalline silicon (mc-Si) solar cells. The downshifting layer is made up of 10% erbium-doped ZnS nanoparticles that are dispersed in a...

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Main Authors: Amruta Pattnaik, Shivangi, Mukesh Kumar
Format: Article
Language:English
Published: Elsevier 2023-07-01
Series:Results in Optics
Online Access:http://www.sciencedirect.com/science/article/pii/S2666950123001116
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author Amruta Pattnaik
Shivangi
Mukesh Kumar
author_facet Amruta Pattnaik
Shivangi
Mukesh Kumar
author_sort Amruta Pattnaik
collection DOAJ
description This study describes how a polymer/ZnS composite layer with antireflection, scattering, and downshifting properties improved the short wavelength response of multi-crystalline silicon (mc-Si) solar cells. The downshifting layer is made up of 10% erbium-doped ZnS nanoparticles that are dispersed in a PMMA matrix at concentrations ranging from 1 mg/ml to 10 mg/ml and applied by spin coating to the front surface of an mc-Si solar cell. The chemical route method is used to create the 10% erbium-doped ZnS NP. XRD, SEM, UV–Vis, and PL techniques are used to identify the synthesized NP. EQE, IQE, reflectance, and J-V measurement serve as distinguishing characteristics for mc-Si solar cells with and without a downshifting layer. The cubic structure of the nanoparticle has been confirmed by the XRD pattern of 10% erbium-doped ZnS NP. The spherical shape of the nanoparticle was visible in the SEM image. The nanoparticle's ability to absorb high-energy photons and release low-energy photons that met the downshifting requirement was confirmed by the UV–Vis and PL spectra. Solar cells with a downshifting layer expose their EQE spectra to enhance their UV response at short wavelengths. Both EQE and J-V measurements are used to calculate the short circuit current density. In the EQE and J-V measurements, it differs from the bare one by 4.76% and 3.57%, respectively. The short circuit current density has confirmed that the 3 mg/ml amount of ZnS:10 %Er NP/PMMA used as a downshifting layer in this study is the right concentration to improve the short wavelength response when applied to the top surface of the mc-Si solar cell.
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spelling doaj.art-22b99744721148f2a33389acc53ad5102023-08-29T04:18:10ZengElsevierResults in Optics2666-95012023-07-0112100459Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layerAmruta Pattnaik0 Shivangi1Mukesh Kumar2Dr Akhilesh Das Gupta Institute of Technology & Management, FC-26,Shastri Park, Delhi-53, India; Corresponding author.Corporate Strategy Management, Bharat Heavy Electricals Limited, Siri Fort, New Delhi, IndiaDepartment of Physics, SSNC, University of Delhi, Alipur, Delhi 110036, IndiaThis study describes how a polymer/ZnS composite layer with antireflection, scattering, and downshifting properties improved the short wavelength response of multi-crystalline silicon (mc-Si) solar cells. The downshifting layer is made up of 10% erbium-doped ZnS nanoparticles that are dispersed in a PMMA matrix at concentrations ranging from 1 mg/ml to 10 mg/ml and applied by spin coating to the front surface of an mc-Si solar cell. The chemical route method is used to create the 10% erbium-doped ZnS NP. XRD, SEM, UV–Vis, and PL techniques are used to identify the synthesized NP. EQE, IQE, reflectance, and J-V measurement serve as distinguishing characteristics for mc-Si solar cells with and without a downshifting layer. The cubic structure of the nanoparticle has been confirmed by the XRD pattern of 10% erbium-doped ZnS NP. The spherical shape of the nanoparticle was visible in the SEM image. The nanoparticle's ability to absorb high-energy photons and release low-energy photons that met the downshifting requirement was confirmed by the UV–Vis and PL spectra. Solar cells with a downshifting layer expose their EQE spectra to enhance their UV response at short wavelengths. Both EQE and J-V measurements are used to calculate the short circuit current density. In the EQE and J-V measurements, it differs from the bare one by 4.76% and 3.57%, respectively. The short circuit current density has confirmed that the 3 mg/ml amount of ZnS:10 %Er NP/PMMA used as a downshifting layer in this study is the right concentration to improve the short wavelength response when applied to the top surface of the mc-Si solar cell.http://www.sciencedirect.com/science/article/pii/S2666950123001116
spellingShingle Amruta Pattnaik
Shivangi
Mukesh Kumar
Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer
Results in Optics
title Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer
title_full Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer
title_fullStr Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer
title_full_unstemmed Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer
title_short Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer
title_sort improving the short wavelength response of the multi crystalline silicon solar cell by using 10 erbium doped zns nanoparticle based downshifting layer
url http://www.sciencedirect.com/science/article/pii/S2666950123001116
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AT mukeshkumar improvingtheshortwavelengthresponseofthemulticrystallinesiliconsolarcellbyusing10erbiumdopedznsnanoparticlebaseddownshiftinglayer