Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems
Co-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties a...
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| Format: | Article |
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MDPI AG
2023-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/19/2691 |
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| author | Yu-Tang Luo Zhehan Zhou Cheng-Yang Wu Li-Ching Chiu Jia-Yang Juang |
| author_facet | Yu-Tang Luo Zhehan Zhou Cheng-Yang Wu Li-Ching Chiu Jia-Yang Juang |
| author_sort | Yu-Tang Luo |
| collection | DOAJ |
| description | Co-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties and more controllable optical properties, including transmittance and haze; however, most previous studies focused on the electrical properties, with less attention paid to obtaining high haze using co-doping. Here, we prepare high-haze Ga- and Zr-co-doped ZnO (GZO:Zr or ZGZO) using atmospheric pressure plasma jet (APPJ) systems. We conduct a detailed analysis to examine the interplay between Zr concentrations and film properties. UV-Vis spectroscopy shows a remarkable haze factor increase of 7.19% to 34.8% (+384%) for the films prepared with 2 at% Zr and 8 at% Ga precursor concentrations. EDS analysis reveals Zr accumulation on larger and smaller particles, while SIMS links particle abundance to impurity uptake and altered electrical properties. XPS identifies Zr mainly as ZrO<sub>2</sub> because of lattice stress from Zr doping, forming clusters at lattice boundaries and corroborating the SEM findings. Our work presents a new way to fabricate Ga- and Zr-co-doped ZnO for applications that require low electrical resistivity, high visible transparency, and high haze. |
| first_indexed | 2024-03-10T21:38:26Z |
| format | Article |
| id | doaj.art-22fe4e67ee274c94b095d843ca518e56 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T21:38:26Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-22fe4e67ee274c94b095d843ca518e562023-11-19T14:49:28ZengMDPI AGNanomaterials2079-49912023-10-011319269110.3390/nano13192691Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet SystemsYu-Tang Luo0Zhehan Zhou1Cheng-Yang Wu2Li-Ching Chiu3Jia-Yang Juang4Department of Mechanical Engineering, National Taiwan University, Taipei 10617, TaiwanDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, TaiwanDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, TaiwanDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, TaiwanDepartment of Mechanical Engineering, National Taiwan University, Taipei 10617, TaiwanCo-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties and more controllable optical properties, including transmittance and haze; however, most previous studies focused on the electrical properties, with less attention paid to obtaining high haze using co-doping. Here, we prepare high-haze Ga- and Zr-co-doped ZnO (GZO:Zr or ZGZO) using atmospheric pressure plasma jet (APPJ) systems. We conduct a detailed analysis to examine the interplay between Zr concentrations and film properties. UV-Vis spectroscopy shows a remarkable haze factor increase of 7.19% to 34.8% (+384%) for the films prepared with 2 at% Zr and 8 at% Ga precursor concentrations. EDS analysis reveals Zr accumulation on larger and smaller particles, while SIMS links particle abundance to impurity uptake and altered electrical properties. XPS identifies Zr mainly as ZrO<sub>2</sub> because of lattice stress from Zr doping, forming clusters at lattice boundaries and corroborating the SEM findings. Our work presents a new way to fabricate Ga- and Zr-co-doped ZnO for applications that require low electrical resistivity, high visible transparency, and high haze.https://www.mdpi.com/2079-4991/13/19/2691transparent conductive oxide (TCO)atmospheric pressure plasma jet (APPJ)co-dopinghaze |
| spellingShingle | Yu-Tang Luo Zhehan Zhou Cheng-Yang Wu Li-Ching Chiu Jia-Yang Juang Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems Nanomaterials transparent conductive oxide (TCO) atmospheric pressure plasma jet (APPJ) co-doping haze |
| title | Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems |
| title_full | Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems |
| title_fullStr | Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems |
| title_full_unstemmed | Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems |
| title_short | Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems |
| title_sort | analysis of hazy ga and zr co doped zinc oxide films prepared with atmospheric pressure plasma jet systems |
| topic | transparent conductive oxide (TCO) atmospheric pressure plasma jet (APPJ) co-doping haze |
| url | https://www.mdpi.com/2079-4991/13/19/2691 |
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