High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> HfO<sub>2</sub>-Based AlGaN/GaN MIS-HEMTs With Y<sub>2</sub>O<sub>3</sub> Interfacial Layer for High Gate Controllability and Interface Quality
High-k HfO<sub>2</sub> has been widely adopted in Si based MOSFETs as gate dielectric for the superior control over gate leakage and channel electrostatics. However, in AlGaN/GaN HEMTs, the additional interface issue as well as high oxygen transparency of HfO<sub>2</sub> has...
Main Authors: | Ya-Ting Shi, Wei-Zong Xu, Chang-Kun Zeng, Fang-Fang Ren, Jian-Dong Ye, Dong Zhou, Dun-Jun Chen, Rong Zhang, Youdou Zheng, Hai Lu |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8918313/ |
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