Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0)
This paper reports on the electrical and broadband dielectric spectroscopy studies of Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> materials (where x = 0.0, 0.4, 1.0, 1.6, 2.0) synthesized using a solid-state reaction method. These studi...
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| Online Access: | https://www.mdpi.com/1996-1944/13/11/2425 |
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| author | Tadeusz Groń Monika Bosacka Elżbieta Filipek Sebastian Pawlus Andrzej Nowok Bogdan Sawicki Henryk Duda Jerzy Goraus |
| author_facet | Tadeusz Groń Monika Bosacka Elżbieta Filipek Sebastian Pawlus Andrzej Nowok Bogdan Sawicki Henryk Duda Jerzy Goraus |
| author_sort | Tadeusz Groń |
| collection | DOAJ |
| description | This paper reports on the electrical and broadband dielectric spectroscopy studies of Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> materials (where x = 0.0, 0.4, 1.0, 1.6, 2.0) synthesized using a solid-state reaction method. These studies showed <i>n</i>-type semiconducting properties with activation energies of 0.147–0.52 eV in the temperature range of 250–400 K, symmetric and linear I–V characteristics, both at 300 and 400 K, with a stronger carrier emission for the matrix and much less for the remaining samples, as well as the dipole relaxation, which was the slowest for the sample with x = 0.0 (matrix) and was faster for Mg-doped samples with x > 0.0. The faster the dipole relaxation, the greater the accumulation of electric charge. These effects were analyzed within a framework of the DC conductivity and the <i>Cole–Cole fit</i> function, including the solid-state density and porosity of the sample. The resistivity vs. temperature dependence was well fitted using the parallel resistor model. Our ab initio calculations also show that the bandgap increased with the Mg content. |
| first_indexed | 2024-03-10T19:35:24Z |
| format | Article |
| id | doaj.art-23450184645b4f4aac05eda13562e2ad |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T19:35:24Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
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| series | Materials |
| spelling | doaj.art-23450184645b4f4aac05eda13562e2ad2023-11-20T01:43:26ZengMDPI AGMaterials1996-19442020-05-011311242510.3390/ma13112425Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0)Tadeusz Groń0Monika Bosacka1Elżbieta Filipek2Sebastian Pawlus3Andrzej Nowok4Bogdan Sawicki5Henryk Duda6Jerzy Goraus7August Chełkowski Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, PolandFaculty of Chemical Technology and Engineering, Department of Inorganic and Analytical Chemistry, West Pomeranian University of Technology in Szczecin, 71-065 Szczecin, PolandFaculty of Chemical Technology and Engineering, Department of Inorganic and Analytical Chemistry, West Pomeranian University of Technology in Szczecin, 71-065 Szczecin, PolandAugust Chełkowski Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, PolandAugust Chełkowski Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, PolandAugust Chełkowski Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, PolandAugust Chełkowski Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, PolandAugust Chełkowski Institute of Physics, University of Silesia in Katowice, 40-007 Katowice, PolandThis paper reports on the electrical and broadband dielectric spectroscopy studies of Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> materials (where x = 0.0, 0.4, 1.0, 1.6, 2.0) synthesized using a solid-state reaction method. These studies showed <i>n</i>-type semiconducting properties with activation energies of 0.147–0.52 eV in the temperature range of 250–400 K, symmetric and linear I–V characteristics, both at 300 and 400 K, with a stronger carrier emission for the matrix and much less for the remaining samples, as well as the dipole relaxation, which was the slowest for the sample with x = 0.0 (matrix) and was faster for Mg-doped samples with x > 0.0. The faster the dipole relaxation, the greater the accumulation of electric charge. These effects were analyzed within a framework of the DC conductivity and the <i>Cole–Cole fit</i> function, including the solid-state density and porosity of the sample. The resistivity vs. temperature dependence was well fitted using the parallel resistor model. Our ab initio calculations also show that the bandgap increased with the Mg content.https://www.mdpi.com/1996-1944/13/11/2425electrical propertiesdielectric spectroscopyrelaxation processes |
| spellingShingle | Tadeusz Groń Monika Bosacka Elżbieta Filipek Sebastian Pawlus Andrzej Nowok Bogdan Sawicki Henryk Duda Jerzy Goraus Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0) Materials electrical properties dielectric spectroscopy relaxation processes |
| title | Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0) |
| title_full | Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0) |
| title_fullStr | Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0) |
| title_full_unstemmed | Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0) |
| title_short | Dipole Relaxation in Semiconducting Zn<sub>2−x</sub>Mg<sub>x</sub>InV<sub>3</sub>O<sub>11</sub> Materials (Where x = 0.0, 0.4, 1.0, 1.6, and 2.0) |
| title_sort | dipole relaxation in semiconducting zn sub 2 x sub mg sub x sub inv sub 3 sub o sub 11 sub materials where x 0 0 0 4 1 0 1 6 and 2 0 |
| topic | electrical properties dielectric spectroscopy relaxation processes |
| url | https://www.mdpi.com/1996-1944/13/11/2425 |
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